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Infineon N-Channel IGBT 30 A 1200 V 3-Pin TO-247 Through Hole IGW15N120H3FKSA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IGW15N120H3FKSA1
Mount Type Through Hole
Series TrenchStop
Energy Rating 2.5mJ
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals Pb-Free, RoHS, JEDEC
Pin Count 3
Maximum Continuous Collector Current Ic 30A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V
Channel Type N
Maximum Power Dissipation Pd 217W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • The device features TrenchStop technology for improved efficiency.
  • Maximum power dissipation of 217 W ensures robust operation.
  • Designed for high-speed switching with low saturation voltage of 2.05 V.
  • Operating temperature range from -40°C to 175°C supports diverse industrial environments.
  • Package is Pb-Free, RoHS compliant, and conforms to JEDEC standards.
  • Anti-parallel diode integrated for fast recovery applications.
  • Suitable for applications requiring low turn-off losses and low EMI.
  • Pin count of 3 enables easy integration in power electronics circuits.

Product Description

Infineon IGW15N120H3FKSA1 is an advanced N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching applications. It combines the gate-drive ease of MOSFETs with the high-current handling of bipolar transistors, making it ideal for power electronics, industrial motor control, and inverter circuits.

This IGBT features a maximum continuous collector current of 30 A and a collector-emitter voltage rating of 1200 V, supporting robust power handling capabilities. The TO-247 package assures reliable through-hole mounting and easy heat dissipation, suitable for industrial power assemblies.

TrenchStop technology incorporated in this model reduces conduction losses and improves switching performance, resulting in low saturation voltage of 2.05 V. With a maximum power dissipation of 217 W and operational temperature range from -40°C to 175°C, it sustains durable operation under demanding thermal conditions.

The device includes an integrated high-speed, fast recovery anti-parallel diode for improved efficiency in switching power supplies. Its Pb-Free, RoHS, and JEDEC compliances assure environmental safety and industry-standard quality.

Applications for this discrete component span industrial automation, power converters, welding machines, and energy management systems where reliable, fast switching semiconductor devices are essential.

The device features TrenchStop technology for improved efficiency. Maximum power dissipation of 217 W ensures robust operation. Designed for high-speed switching with low saturation voltage of 2.05 V. Operating temperature range from -40°C to 175°C supports diverse industrial environments.

Package is Pb-Free, RoHS compliant, and conforms to JEDEC standards. Anti-parallel diode integrated for fast recovery applications. Suitable for applications requiring low turn-off losses and low EMI. Pin count of 3 enables easy integration in power electronics circuits.

For more selections within Infineon semiconductor power components, explore related IGBT and power transistor components on EnvMart.

Infineon N-Channel IGBT 30 A 1200 V 3-Pin TO-247 Through Hole IGW15N120H3FKSA1
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