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onsemi N-Channel IGBT 100 A 650 V TO-247 Package Through Hole Mount AFGY100T65SPD
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | AFGY100T65SPD |
| Mount Type | Through Hole |
| Series | AFGY100T65SPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 100A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 660W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Designed for high efficiency with low conduction and switching losses.
- Equipped with soft fast recovery diode to reduce EMI.
- Rugged transient reliability and short circuit ruggedness for demanding applications.
- Operating temperature range from -55°C to 175°C ensures reliable performance.
- Ideal for automotive and industrial electronics requiring AEC-Q101 standard compliance.
- Through hole mount type with 3 pins for easy PCB integration.
- Maximum power dissipation of 660 W suitable for high power applications.
- Maximum gate-emitter voltage of 20 V protects gate integrity.
Product Description
onsemi AFGY100T65SPD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed to handle continuous collector current of 100 A and collector-emitter voltage up to 650 V. It features a TO-247 through hole mounted package with 3 pins, suitable for various industrial and automotive semiconductor applications.
This device integrates a soft fast recovery diode co-packed to minimize switching losses and electromagnetic interference (EMI), delivering efficient operation in power electronics circuits.
The AFGY100T65SPD offers rugged transient reliability and is qualified to the automotive AEC-Q101 standard, making it ideal for automotive electronic systems and other demanding environments.
Operating temperatures range from -55°C to 175°C, ensuring stable performance across harsh conditions. Its maximum power dissipation rating of 660 W supports high power tasks, while the low saturation voltage (1.6 V max) ensures efficient conduction.
Additional benefits include tight parameter distribution for consistent device performance, high input impedance for improved control, and short circuit ruggedness for durability. Designed for high efficiency with low conduction and switching losses.
Equipped with soft fast recovery diode to reduce EMI. Rugged transient reliability and short circuit ruggedness for demanding applications. Operating temperature range from -55°C to 175°C ensures reliable performance. Complies with automotive AEC-Q101 standard for automotive applications.
Through hole mounting in TO-247 package with 3-pin configuration. High maximum power dissipation of 660 W supports robust power handling. Maximum gate-emitter voltage of 20 V protects gate circuit. Low collector-emitter saturation voltage of 1.6 V enhances energy efficiency.
Tight parameter distribution and high input impedance improve system control.
This N-Channel IGBT device is applicable in industrial, automotive, power conversion, and manufacturing sectors. It is suitable for designers requiring reliable, high-current switching components compliant with automotive standards.
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Frequently Asked Questions
The maximum continuous collector current for the AFGY100T65SPD is 100 A.
This model has a maximum collector-emitter voltage rating of 650 V.
The operating temperature range for the AFGY100T65SPD is from -55°C to 175°C.
It has a maximum power dissipation rating of 660 W, suitable for high power applications.
The AFGY100T65SPD comes in a TO-247 package, designed for through hole mounting.
The maximum gate-emitter voltage for this IGBT is 20 V, which protects the gate integrity.
This model complies with the AEC-Q101 automotive standard, making it suitable for automotive applications.
The AFGY100T65SPD features a 3-pin configuration for easy PCB integration.
The maximum collector-emitter saturation voltage for this device is 1.6 V.
It features a soft fast recovery diode co-packed to minimize switching losses and electromagnetic interference (EMI).
This IGBT is applicable in industrial, automotive, power conversion, and manufacturing sectors.
Key benefits include low conduction and switching losses, rugged transient reliability, and short circuit ruggedness for demanding applications.
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