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STMicroelectronics N-Channel IGBT 40 A 650 V 3-Pin TO-247 Through Hole STGWA20H65DFB2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STGWA20H65DFB2 |
| Mount Type | Through Hole |
| Series | Trench Gate Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 147W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Maximum continuous collector current of 40 A supports high load requirements.
- Rated for 650 V maximum collector emitter voltage ensuring robust performance under high voltage.
- 3-pin TO-247 package with through-hole mounting for easy integration into PCB assemblies.
- Features a maximum power dissipation of 147 W for reliable thermal management.
- Operates within a temperature range from -55°C to 175°C for broad environmental suitability.
- Trench gate field-stop series designed to minimize tail current and enhance switching speed.
- Low collector emitter saturation voltage of 2.1 V reduces conduction losses.
- Includes a very fast and soft recovery co-packaged diode improving efficiency in switching circuits.
Product Description
STMicroelectronics STGWA20H65DFB2 is an N-Channel IGBT semiconductor device designed for high-speed switching and power control. Rated for a maximum continuous collector current of 40 A and a maximum collector-emitter voltage of 650 V, it is suitable for power electronic applications requiring efficient and reliable operation.
The device is housed in a 3-pin TO-247 package with through-hole mounting, facilitating integration into various circuit designs. It belongs to the Trench Gate Field Stop series, known for low saturation voltage and minimized tail current, resulting in excellent thermal performance and reduced switching losses.
Operating over a wide temperature range from -55°C to 175°C, this IGBT ensures robust performance in industrial, automotive, and power control environments. The 147 W power dissipation rating allows for efficient heat management, supporting demanding load conditions.
Additional features include a maximum gate-emitter voltage rating of ±20 V and a very fast, soft recovery co-packaged diode for improved switching response. The device design emphasizes tight parameter distribution and low thermal resistance, enhancing system reliability.
This IGBT is well-suited for applications such as motor drives, power inverters, industrial automation, and other high-power switching systems requiring fast, efficient operation. Maximum continuous collector current of 40 A.
Operating voltage up to 650 V. 3-pin TO-247 long-leads package with through-hole mounting. Power dissipation rating of 147 W. Wide operating temperature from -55°C to 175°C. Low collector emitter saturation voltage of 2.1 V.
Trench gate field-stop series architecture reducing switching losses. Fast and soft recovery diode included. Explore more power semiconductor devices and IGBTs for diverse industrial, automotive, and power electronics applications at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current of this IGBT is 40 A.
It is rated for a maximum collector-emitter voltage of 650 V.
The maximum power dissipation rating is 147 W.
This IGBT operates within a temperature range from -55°C to 175°C.
It is housed in a 3-pin TO-247 package with through-hole mounting.
The maximum collector-emitter saturation voltage is 2.1 V.
It includes a very fast and soft recovery co-packaged diode for improved switching response.
This IGBT belongs to the Trench Gate Field Stop series.
The maximum gate-emitter voltage rating is ±20 V.
It is suitable for applications such as motor drives, power inverters, and industrial automation.
This model has a pin count of 3.
The country of origin for this IGBT is India.
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