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Toshiba N-Channel Discrete IGBT 20 A 600 V 3-Pin TO-220SIS Through Hole GT20J341
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Model | GT20J341 |
| Mount Type | Through Hole |
| Series | GT20J341 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220SIS |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 20A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 45W |
| Maximum Gate Emitter Voltage VGEO | ±25 V |
Key Features
- The device supports high efficiency and fast switching applications.
- It has a maximum power dissipation of 45W to handle substantial loads.
- Designed with through hole mounting for easy PCB installation.
- Operates reliably in temperature ranges from -55°C up to 150°C.
- Includes ±25 V maximum gate emitter voltage for robust gate control.
- Compatible with RoHS standards ensuring environmental compliance.
- Features a maximum collector emitter saturation voltage of 2 V for reduced loss.
- Ideal for power electronics and industrial control applications.
Product Description
Toshiba GT20J341 is an N-Channel Discrete Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching with a maximum continuous collector current of 20 A and maximum collector emitter voltage of 600 V. This device is housed in a 3-pin TO-220SIS package with through hole mounting, enabling straightforward integration into power electronics circuits.
The GT20J341 combines the gate-drive simplicity of MOSFETs with the high-current and low-saturation voltage characteristics of bipolar transistors, ideal for applications requiring fast switching and efficient power management. It supports maximum power dissipation up to 45W, making it suitable for demanding industrial environments.
The IGBT can operate in a broad temperature range from -55°C to 150°C, ensuring reliable performance under harsh conditions. With a maximum gate emitter voltage of ±25 V and a maximum collector emitter saturation voltage of 2 V, the device provides robust electrical characteristics suitable for discrete semiconductor roles in various power control and conversion applications.
Compliance with RoHS environmental standards highlights its suitability for modern manufacturing requirements seeking sustainable components. The package and pin configuration support easy through-hole PCB assembly, facilitating rapid production and maintenance.
This discrete IGBT is ideal for industrial, manufacturing, power supply, and electronic control systems, offering durable, high-performance switching capabilities. The device supports high efficiency and fast switching applications.
Maximum power dissipation capacity is 45W to handle substantial loads. Through hole mounting enables easy circuit board installation. Wide operating temperature range from -55°C to 150°C. Gate emitter voltage max ±25 V ensures strong control characteristics.
Conforms to RoHS standards for environmental safety. Low saturation voltage reduces energy loss during operation. Suitable for industrial power electronic applications. Explore more IGBTs and discrete power semiconductors at EnvMart for quality industrial electronic components designed for enhanced efficiency and reliability.
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Frequently Asked Questions
The maximum continuous collector current for the GT20J341 IGBT is 20 A.
The maximum collector emitter voltage (Vceo) for the GT20J341 is 600 V.
This IGBT can handle a maximum power dissipation of 45 W.
The operating temperature range for this model is from -55°C to 150°C.
The GT20J341 uses through hole mounting, which facilitates easy PCB installation.
The maximum gate emitter voltage (VGEO) for the GT20J341 is ±25 V.
The maximum collector emitter saturation voltage (VceSAT) for this IGBT is 2 V.
This IGBT has a pin count of 3.
Yes, the GT20J341 complies with RoHS standards, ensuring environmental safety.
The GT20J341 is housed in a TO-220SIS package type.
This IGBT is suitable for industrial power electronics and electronic control systems, offering efficient power management.
The brand of this IGBT is Toshiba.
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