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Infineon N-Channel IGBT 50 A 1200 V 3-Pin TO-247 Through Hole IKW25N120H3FKSA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IKW25N120H3FKSA1
Mount Type Through Hole
Series TrenchStop
Energy Rating 4.3mJ
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals RoHS, Pb-free lead plating, JEDEC
Pin Count 3
Maximum Continuous Collector Current Ic 50A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.7V
Channel Type N
Maximum Power Dissipation Pd 326W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • Maximum continuous collector current of 50 amperes ensures high current capacity.
  • Collector-emitter voltage rating of 1200 volts supports high voltage applications.
  • Maximum power dissipation of 326 watts for efficient thermal management.
  • Robust TO-247 package with through-hole mounting for secure installation.
  • TrenchStop™ series technology for low saturation voltage and improved switching performance.
  • Wide operating temperature range from -40°C to 175°C enhances reliability.
  • Maximum gate-emitter voltage of ±20 volts protects the device in gate drive circuits.
  • Low collector-emitter saturation voltage of 2.7 volts minimizes conduction losses.

Product Description

Infineon IKW25N120H3FKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring efficient switching and high current handling. This 3-pin TO-247 through-hole device supports a maximum continuous collector current of 50 amperes and a collector-emitter voltage rating of 1200 volts, making it suitable for various industrial power control, motor drives, and inverter applications.

The device belongs to the TrenchStop™ series, which provides very low saturation voltage and short tail current, leading to lower turn-off losses and improved overall efficiency. Its robust construction allows operation over a wide temperature range from -40°C to 175°C, ensuring reliable performance in harsh industrial environments.

Featuring a maximum power dissipation rating of 326 watts and a gate-emitter voltage tolerance of ±20 volts, this IGBT supports stable drive control with minimized conduction losses due to its 2.7 V collector-emitter saturation voltage. The package offers reliable through-hole mounting in the TO-247 form factor, facilitating easy integration into power modules and circuits.

This product complies with RoHS regulations, including Pb-free lead plating, and meets JEDEC standards for quality and reliability. With a switching energy rating of 4.3mJ, it is designed to reduce electromagnetic interference, enhancing system performance.

Typical industrial use cases include power supplies, industrial drives, renewable energy systems, automotive electronics, and power conversion equipment. It is ideal for engineers and designers seeking a reliable power semiconductor solution with high efficiency and robust electrical characteristics.

Maximum continuous collector current of 50 amperes ensures high current capacity. Collector-emitter voltage rating of 1200 volts supports high voltage applications. Maximum power dissipation of 326 watts for efficient thermal management.

Robust TO-247 package with through-hole mounting for secure installation. TrenchStop™ series technology for low saturation voltage and improved switching performance. Wide operating temperature range from -40°C to 175°C enhances reliability.

Maximum gate-emitter voltage of ±20 volts protects the device in gate drive circuits. Low collector-emitter saturation voltage of 2.7 volts minimizes conduction losses. RoHS compliant with Pb-free lead plating and JEDEC standards.

Energy rating of 4.3mJ supports fast switching with low losses.

Explore more Infineon high-quality semiconductor products and enhance your industrial electronics projects with reliable performance and compliance by browsing EnvMart's Electronics & Electricals category.

Infineon N-Channel IGBT 50 A 1200 V 3-Pin TO-247 Through Hole IKW25N120H3FKSA1
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is 50 amperes.

The collector-emitter voltage rating of this model is 1200 volts, making it suitable for high voltage applications.

This IGBT has a maximum power dissipation rating of 326 watts, allowing for efficient thermal management.

The operating temperature range for this IGBT is from -40°C to 175°C, which enhances its reliability in various environments.

This model features a robust TO-247 package with through-hole mounting for secure installation.

The maximum gate-emitter voltage tolerance for this device is ±20 volts, which protects it in gate drive circuits.

The collector-emitter saturation voltage for this IGBT is 2.7 volts, which helps minimize conduction losses.

This IGBT belongs to the TrenchStop™ series, known for low saturation voltage and improved switching performance.

The IKW25N120H3FKSA1 complies with RoHS regulations, includes Pb-free lead plating, and meets JEDEC standards for quality and reliability.

The energy rating for this IGBT is 4.3mJ, which supports fast switching with low losses.

This IGBT has a pin count of 3, which is typical for its TO-247 package type.

This model is suitable for various industrial applications, including power supplies, motor drives, and renewable energy systems.

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