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onsemi Insulated Gate Bipolar Transistor (IGBT) 650V, 3-Pin TO-247-3L Surface Mount FGHL75T65LQDT

Category IGBT Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 4.82mm
Length 15.87mm
Model FGHL75T65LQDT
Width 20.82mm
Mount Type Surface
Series FGHL75T65LQDT
Maximum Operating Temperature 175°C
Package Type TO-247-3L
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 650V
Maximum Power Dissipation Pd 469W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • Maximum Collector Emitter Voltage is 650 volts ensuring high voltage tolerance.
  • Maximum Power Dissipation is 469 watts for reliable thermal handling.
  • Package type is TO-247-3L, supporting surface mount applications.
  • Operates safely within temperature range from -55°C to 175°C.
  • Rated for a Maximum Gate Emitter Voltage of 20 volts enabling stable gate control.
  • Designed with 3 pins for secure electrical connectivity.
  • Compact dimensions with 15.87 mm length, 20.82 mm width, and 4.82 mm height optimize PCB footprint.
  • RoHS compliant ensuring environmental safety and regulatory compliance.

Product Description

onsemi FGHL75T65LQDT is a premium Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications requiring high voltage and power efficiency. Featuring a maximum collector emitter voltage of 650 V and power dissipation capability of 469 W, this IGBT excels in balancing low conduction losses with fast switching performance.

The device comes in a TO-247-3L package type configured for surface mounting with a 3-pin layout. It operates efficiently over a broad temperature range from -55°C to 175°C, making it suitable for rugged industrial environments.

Typical uses include solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, energy storage systems (ESS), and other high-performance power conversion equipment. Its positive temperature coefficient facilitates easy paralleling and stable operation in complex circuits.

Key features include a maximum gate emitter voltage of 20 V ensuring precise gate control and compact device dimensions (length 15.87 mm, width 20.82 mm, height 4.82 mm) for efficient PCB integration. The product is RoHS compliant, endorsing environmentally responsible manufacturing standards.

Maximum Collector Emitter Voltage of 650 V. Maximum Power Dissipation of 469 W. TO-247-3L Package with surface mount configuration. Operating temperature range from -55°C to 175°C. Maximum Gate Emitter Voltage of 20 V. Three-pin design for electrical connectivity reliability.

Compact form factor optimizing board space. RoHS compliant for environmental safety.

This onsemi FGHL75T65LQDT IGBT caters to industrial, laboratory, and manufacturing applications requiring robust power switching components. Ideal in electronic power supplies, renewable energy installations, and automotive electronics. For exploring more products in IGBT and related semiconductor categories, browse EnvMart's comprehensive selection.

onsemi Insulated Gate Bipolar Transistor (IGBT) 650V, 3-Pin TO-247-3L Surface Mount FGHL75T65LQDT
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Frequently Asked Questions

The maximum collector emitter voltage for the FGHL75T65LQDT is 650 volts.

This IGBT has a maximum power dissipation capability of 469 watts.

It operates safely within a temperature range from -55°C to 175°C.

The FGHL75T65LQDT comes in a TO-247-3L package type, which supports surface mount applications.

This model features a 3-pin design for secure electrical connectivity.

The maximum gate emitter voltage for the FGHL75T65LQDT is 20 volts, ensuring stable gate control.

The dimensions of the FGHL75T65LQDT are 15.87 mm in length, 20.82 mm in width, and 4.82 mm in height.

Yes, the FGHL75T65LQDT is RoHS compliant, ensuring environmental safety and regulatory compliance.

This IGBT is suitable for applications such as solar inverters, uninterruptible power supplies (UPS), and electric vehicle charging stations.

The positive temperature coefficient of this model facilitates easy paralleling and stable operation in complex circuits.

The FGHL75T65LQDT is manufactured in India.

The FGHL75T65LQDT belongs to the FGHL75T65LQDT series.

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