Infineon N-Channel IGBT 160 A 600 V Super-247 Through Hole IRGPS46160DPBF

Infineon IRGPS46160DPBF is an N-Channel IGBT transistor featuring a maximum continuous collector current of 160 amperes and a maximum collector emitter voltage rating of 600 volts. Encapsulated in a 3-pin Super-247 through hole package, it is optimized for medium frequency applications requiring fast switching and high efficiency.

This IGBT demonstrates a maximum power dissipation of 750 watts and uses TrenchStop technology to minimize switching and conduction losses, thus improving thermal performance and power density. The device supports a maximum gate emitter voltage of ±30 volts and has a collector emitter saturation voltage of 2.05 volts.

Designed to operate reliably across a wide temperature range of -55°C to 175°C, this component meets RoHS compliance and adheres to stringent automotive standards AEC-Q101-001 and AEC-Q101-005. It offers an energy rating of 500mJ, making it suitable for transient high-energy events.

Manufactured in Mexico, the IRGPS46160DPBF integrates features such as FRED diodes optimized for enhanced performance and is designed for long-term reliability in industrial, automotive, power electronics, and manufacturing applications.

Engineers can utilize this IGBT in power switching circuits, motor drives, inverters, and other energy-efficient systems requiring robust, high-current switching capability with through hole mounting for ease of integration.

This IGBT offers maximum continuous collector current of 160 A. It has a maximum collector emitter voltage of 600 V for high voltage applications. Maximum power dissipation is rated at 750 W supporting medium power designs.

Designed with TrenchStop technology for efficient switching performance. Features a pin count of 3 and mount type is through hole. Supports a maximum gate emitter voltage of ±30 V and collector emitter saturation voltage of 2.05 V.

Operating temperature range from -55°C to 175°C ensures reliability in harsh environments. Complies with RoHS and meets automotive standards AEC-Q101-001 and AEC-Q101-005. Energy rating of 500mJ makes it suitable for transient conditions.

Manufactured in Mexico, ensuring global quality standards. Explore more IGBTs in EnvMart’s Electronics & Electricals Semiconductor category for precision and efficient power transistor solutions.