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Infineon HEXFET N-Channel MOSFET, 200 A, 60 V Enhancement Mode, 3-Pin TO-247 Package IRFP3206PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP3206PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 200A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 280W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Enhancement mode channel type offers excellent switching performance.
- TO-247 package ensures reliable through-hole mounting.
- Low maximum drain-source resistance of 3 milliohms reduces conduction losses.
- High maximum power dissipation of 280 W supports demanding applications.
- Wide operating temperature range from -55°C to 175°C ensures durability.
- Typical gate charge is 120 nC at Vgs for efficient gate drive.
- Maximum gate-source voltage tolerance of ±20 V protects device integrity.
- Forward voltage drop of 1.3 V facilitates efficient switching under load.
Product Description
Infineon's IRFP3206PBF is a HEXFET N-Channel MOSFET designed for high current and voltage applications. Featuring a maximum continuous drain current of 200 A and a maximum drain-source voltage of 60 V, this enhancement mode device comes in a robust 3-pin TO-247 package, suitable for through-hole mounting in industrial electronic circuits.
The device offers a low Rds(on) of 3 milliohms, which minimizes conduction losses and enhances efficiency. With a maximum power dissipation rating of 280 W, it is engineered to handle substantial load conditions while maintaining thermal stability.
Operating temperature ranges from -55°C to 175°C provide resilience in harsh environments. The typical gate charge of 120 nC at rated gate voltage allows for efficient switching action, while the gate-source voltage tolerance of -20 V to +20 V ensures device protection against voltage spikes.
Compact physical dimensions enable its integration into various electronics designs where space is essential. This MOSFET exhibits a forward voltage drop of 1.3 V, suitable for high-speed switching requirements.
Commonly used in motor control circuits and AC-DC synchronous rectifiers, the IRFP3206PBF enhances performance in power management applications by providing reliable switching and high power handling capabilities.
Enhancement mode N-channel MOSFET channel type. Maximum continuous drain current of 200 A. Maximum drain-source voltage of 60 V. Package type: TO-247 with 3 pins for through-hole mounting. Maximum drain-source resistance Rds(on) of 3 mΩ.
Maximum power dissipation rated at 280 W. Operating temperature range: -55°C to 175°C. Typical gate charge (Qg) of 120 nC at Vgs. Maximum gate-source voltage: -20 V to +20 V. Compact size improves design flexibility.
This product is ideal for applications in industrial electronics, motor controls, HVAC power modules, and power conversion systems. Infineon's reputation for quality ensures high efficiency and durability in demanding environments.
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Frequently Asked Questions
The maximum continuous drain current of the IRFP3206PBF is 200 A.
This MOSFET has a maximum drain-source voltage of 60 V.
It comes in a TO-247 package, which is suitable for through-hole mounting.
The maximum power dissipation for the IRFP3206PBF is rated at 280 W.
The typical gate charge at the rated gate voltage is 120 nC.
The maximum gate-source voltage tolerance is ±20 V.
The operating temperature range is from -55°C to 175°C.
The dimensions are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
The forward voltage drop is 1.3 V.
The maximum drain-source resistance (Rds(on)) is 3 mΩ.
It is commonly used in motor control circuits and AC-DC synchronous rectifiers.
This model features an enhancement mode N-channel type.
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