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Vishay N-Channel MOSFET Depletion Type, 37A, 60V, PowerPAK (8x8L), 4-Pin, SIJH600E-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 8mm |
| Model | SIJH600E-T1-GE3 |
| Width | 7.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK (8x8L) |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 37A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.01Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 333W |
| Typical Gate Charge Qg @ Vgs | 141nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Depletion-mode N-channel MOSFET with high current rating for power management applications.
- Maximum continuous drain current of 37A and drain-source voltage up to 60V.
- PowerPAK (8x8L) surface mount package with compact 8mm x 7.9mm footprint.
- Low drain-source resistance of 0.01Ω minimizes conduction losses.
- Typical gate charge of 141nC ensures efficient switching performance.
- Maximum power dissipation up to 333W for high-power requirements.
- Wide operating temperature range from -55°C to 125°C, with automotive AEC-Q101 standard compliance.
- Suitable for battery management, motor drive control, and synchronous rectification applications.
Product Description
Vishay SIJH600E-T1-GE3 is a high-performance N-channel depletion-mode MOSFET designed for demanding power management applications requiring efficient switching and high current. Rated for 37A maximum continuous drain current and up to 60V drain-source voltage, this MOSFET delivers reliable performance in harsh environments.
Depletion-mode design allows for normally-on operation and flexible circuit integration. Low drain-source resistance (0.01Ω) provides superior conduction ratios for minimized loss. PowerPAK (8x8L) surface mount package enhances thermal dissipation and allows for compact PCB layouts.
Typical gate charge at Vgs is 141nC, facilitating fast transitions and low gate drive power requirement. Maximum power dissipation of 333W ensures operational stability under heavy loads. Wide operating temperature range from -55°C to 125°C suitable for industrial and automotive use, with AEC-Q101 compliance.
Package dimensions are 8mm length x 7.9mm width for compact component placement. The MOSFET supports up to 4-pin connections, enabling extensibility in multi-channel designs.
Applications include battery management, motor drive control, synchronous rectification, and advanced power conversion solutions in industrial, automotive, laboratory, and commercial settings. The device’s robust architecture and fully lead-free design meet rigorous reliability and environmental standards.
Ideal for use in power supplies, drive circuits, and smart energy modules, it is designed to operate across wide voltage and temperature ranges. Vishay’s TrenchFET® Gen IV technology boosts efficiency and reduces switching losses, making it suitable for demanding environments.
Explore similar Vishay and N-channel MOSFET components in the EnvMart Semiconductor category for your design and manufacturing requirements.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 37A.
It can handle a maximum drain-source voltage of up to 60V.
The typical gate charge at Vgs is 141nC.
The maximum power dissipation is up to 333W.
The package dimensions are 8mm in length and 7.9mm in width.
It operates within a temperature range of -55°C to 125°C.
This model uses surface mount technology.
Yes, it complies with the AEC-Q101 automotive standard.
The maximum drain-source resistance is 0.01Ω.
This MOSFET has a pin count of 4.
It utilizes a depletion-mode N-channel design.
It is suitable for battery management, motor drive control, and synchronous rectification applications.
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