Nexperia N-Channel MOSFET Type NX7002AK, 300 mA, 60 V, Enhancement Mode, 3-Pin SOT-23 NX7002AK

Nexperia NX7002AK is an N-Channel MOSFET designed for efficient switching and amplification in electronic circuits. It features a maximum continuous drain current of 300 mA and a drain-source voltage rating of 60 V, operating in enhancement mode. Packaged in a space-saving 3-pin SOT-23 surface-mount device, it is ideal for compact electronic assemblies.

This MOSFET delivers a maximum power dissipation capacity of 1.33 W, making it suitable for low power semiconductor applications such as switching regulators and load switches. The device's maximum drain-source resistance (Rds) of 4.5 ohms minimizes power losses during operation.

With a typical gate charge of only 0.33 nC at gate-source voltage, the NX7002AK supports fast switching performance, crucial for efficient power conversion and signal control. It withstands operating temperatures from -55°C to 150°C, which ensures reliability in harsh industrial, automotive, and consumer electronics applications.

The forward voltage drop of 1.2 V and gate-source voltage maximum of 20 V conform to typical MOSFET requirements. Its compact dimensions (3 mm length, 1.4 mm width, 1 mm height) enable use in dense PCB layouts, maximizing space efficiency.

The device is surface-mount compatible with a 3-pin SOT-23 package for streamlined PCB assembly. Optimized for power management tasks including load switching and signal amplification. Suitable for use in industrial electronics, power supplies, and automotive control systems.

Wide operating temperature range supports reliability in varied environments. Low gate charge and resistance ensure energy-efficient switching operation. Explore more Nexperia semiconductor components in EnvMart’s comprehensive catalog to support your electronic design and manufacturing needs.