$1.26
$1.23
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET N-Channel MOSFET 110 A 55 V Enhancement 3-Pin TO-220 IRF3205ZPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF3205ZPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features a rugged HEXFET N-Channel design for efficient motor control applications.
- Supports a maximum continuous drain current of 110 A and a drain-source voltage of 55 V.
- Has a low maximum drain-source resistance of 7 milliohms for efficient conduction.
- Includes a typical gate charge of 76 nC at gate-source voltage with a maximum operating temperature of 175°C.
- Designed for through-hole mounting with a compact TO-220 form factor.
- Operates within a temperature range of -55°C to 175°C for reliable performance in harsh environments.
- Optimized for motor drive and AC-DC synchronous rectifier applications.
- Lacks automotive qualification but provides industry-grade reliability and power dissipation up to 170 W.
Product Description
Infineon IRF3205ZPBF HEXFET N-Channel MOSFET is a highly durable and efficient semiconductor device designed for high current and power applications. This 3-pin device is packaged in a TO-220 form factor supporting through-hole mounting, delivering a maximum continuous drain current of 110 A and a drain-source voltage rating of 55 V. It features an enhancement mode channel and a low on-resistance of 7 milliohms, enabling efficient power conversion and minimal conduction losses.
Constructed to operate reliably in a broad temperature range from -55°C to 175°C, the device is suitable for industrial, motor control, and power supply applications. Its typical gate charge of 76 nanocoulombs ensures fast switching capabilities, making it ideal for synchronous rectifier circuits and AC-DC power supplies. The device supports a maximum power dissipation of 170 W, providing robust thermal performance in demanding electrical environments.
The compact dimensions of 10.54 mm length, 8.77 mm height, and 4.69 mm width make this MOSFET suitable for space-constrained circuit boards. It lacks automotive certifications but meets industrial standards, offering reliability for general-purpose semiconductor needs.
Features a rugged HEXFET N-Channel design for efficient motor control applications. Supports a maximum continuous drain current of 110 A and a drain-source voltage of 55 V. Has a low maximum drain-source resistance of 7 milliohms for efficient conduction.
Includes a typical gate charge of 76 nC at gate-source voltage with a maximum operating temperature of 175°C. Designed for through-hole mounting with a compact TO-220 form factor. Operates within a temperature range of -55°C to 175°C for reliable performance in harsh environments.
Optimized for motor drive and AC-DC synchronous rectifier applications. Lacks automotive qualification but provides industry-grade reliability and power dissipation up to 170 W.
This MOSFET is commonly employed in industrial power management, motor control drives, and synchronous rectifier circuits where high efficiency and thermal capability are critical. It serves laboratory, manufacturing, HVAC, and commercial electronics applications requiring durable semiconductor components.
Explore the full range of Infineon semiconductor products at EnvMart for advanced electronic components tailored to professional industrial uses.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 110 A.
The drain-source voltage rating is 55 V.
It supports a maximum power dissipation of 170 W.
The maximum drain-source resistance is 7 milliohms.
It operates within a temperature range of -55°C to 175°C.
The typical gate charge is 76 nC at gate-source voltage.
This model is designed for through-hole mounting.
The dimensions are 10.54 mm in length, 8.77 mm in height, and 4.69 mm in width.
It features an N-channel type design.
It is optimized for motor drive and AC-DC synchronous rectifier applications.
The maximum gate-source voltage is -20 to +20 V.
The forward voltage is 1.3 V.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$1.26
$1.23
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent