Infineon CoolMOS S5 N-Channel MOSFET 20A 600V Enhancement Mode 3-Pin TO-247 SPW20N60S5FKSA1

Infineon SPW20N60S5FKSA1 CoolMOS S5 series N-Channel MOSFET offers superior performance in high voltage power management applications. Rated for a maximum continuous drain current of 20 Amperes and a drain-source voltage of 600 Volts, this device is built to deliver efficient switching in industrial and commercial electronics.

Its 3-pin TO-247 through-hole package ensures easy integration into assemblies requiring reliable mechanical and electrical connections. Featuring enhancement mode operation with an ultra-low gate charge of 79nC, it supports precise control and reduced switching losses, ideal for modern power electronics designs.

With maximum power dissipation capacity of 208 Watts and a junction-to-case thermal resistance of 0.6 K/W, the MOSFET enables effective thermal management in demanding environments. Operating temperature ranges from -55°C up to 150°C enable robust use in harsh conditions and varied industrial settings.

The device withstands a maximum gate-source voltage of ±20V, ensuring flexibility in gate drive configurations, and can handle pulsed drain currents of up to 40A, offering resilience to transient electrical stresses. Its low forward voltage drop of 1.2V further improves efficiency in power conversion and motor control circuits.

Applications include power conversion in industrial automation, motor drives and control systems, uninterruptible power supplies (UPS), backup power systems, and renewable energy source inverters.

Features an N-channel enhancement mode configuration suitable for precise control. Maximum continuous drain current of 20A supports heavy load operations. High voltage rating of 600V accommodates demanding power system requirements.

3-pin TO-247 package provides robust through-hole mounting. Ultra-low typical gate charge of 79nC enhances switching efficiency. Operates reliably across a wide temperature range from -55°C to 150°C. Maximum power dissipation rating of 208W ensures high thermal robustness.

Maximum gate-source voltage tolerance of ±20V for flexible driving conditions. Ideal for power conversion, motor drives, UPS, and renewable energy systems. Effective thermal resistance junction to case of 0.6K/W facilitates heat dissipation.

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