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onsemi PowerTrench N-Channel MOSFET 4 A 150 V Enhancement 3-Pin TO-220 FDP2572
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | FDP2572 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 54mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 135W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
Key Features
- Designed with PowerTrench technology for efficient power management.
- Supports through-hole mounting for robust device integration.
- Features an enhancement mode channel for precise control.
- Maximum power dissipation rating of 135 W ensures reliability under load.
- Operating temperature range from -55°C to 175°C for industrial applications.
- Typical gate charge of 26 nC facilitates fast switching.
- Low maximum drain-source resistance of 54 mΩ to minimize power losses.
- Complies with automotive standard AEC-Q101 for quality assurance.
Product Description
onsemi FDP2572 is a PowerTrench® N-Channel MOSFET designed to handle a maximum continuous drain current of 4 A and a maximum drain-source voltage of 150 V. Housed in a robust 3-pin TO-220 package with through-hole mounting, this device offers enhanced performance suitable for industrial, automotive, and power management applications.
The transistor operates in enhancement mode and delivers efficient switching with a typical gate charge of 26 nC at Vgs. Featuring a low maximum drain-source resistance of 54 mΩ, it ensures minimal conduction loss and improved efficiency. The device is rated for maximum power dissipation of 135 W, supporting demanding operational conditions within a wide temperature range from -55°C to 175°C.
Built to meet AEC-Q101 automotive standards, the FDP2572 MOSFET is well-suited for use in automotive electronics and other rugged environments. Its compact size with dimensions of 10.67 mm length, 4.83 mm width, and 9.4 mm height allows for space-efficient circuit designs.
The MOSFET supports gate-source voltages from -20 V to +20 V and features a forward voltage of 1.25 V, enabling robust gate drive and switching characteristics. This device is ideal for power management, industrial control systems, and embedded electronics requiring reliable semiconductor switching devices.
Designed with PowerTrench technology for enhanced power handling and thermal performance. Supports through-hole mounting for solid mechanical and electrical connections. Wide operating temperature range makes it suitable for harsh industrial environments.
Low gate charge provides fast switching capabilities and efficiency. Certified to automotive standard AEC-Q101 for quality and reliability in automotive applications. Explore more discrete semiconductors and MOSFET devices at EnvMart to support your industrial, automotive, and power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
This N-channel MOSFET has a maximum drain-source voltage rating of 150 V.
It has a maximum power dissipation rating of 135 W, ensuring reliable performance under load conditions.
The operating temperature range for the FDP2572 is from -55°C to 175°C, making it suitable for harsh environments.
This device supports through-hole mounting, allowing for robust mechanical and electrical connections.
The typical gate charge for this model is 26 nC, facilitating fast switching capabilities.
The maximum drain-source resistance is 54 mΩ, which helps minimize power losses during operation.
The dimensions of this model are 10.67 mm in length, 4.83 mm in width, and 9.4 mm in height.
This MOSFET complies with the AEC-Q101 automotive standard, ensuring quality assurance for automotive applications.
The forward voltage for this model is 1.25 V, which is relevant for gate drive and switching characteristics.
The channel type of this device is N-channel, and it operates in enhancement mode for precise control.
This model belongs to the PowerTrench series, designed for efficient power management.
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