onsemi Isolated 2 Type N-Channel Power MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6303N

onsemi FDC6303N Isolated 2 Type N-Channel Power MOSFET is an advanced semiconductor device designed to provide efficient switching performance in power electronics circuits. Operating at a maximum drain-source voltage of 25 V and a continuous drain current of 680 mA, this MOSFET is ideal for low voltage power switching applications. The device comes in a compact SOT-23 package with six pins, supporting surface-mount assemblies with minimal board space requirements.

This enhancement mode MOSFET features isolated transistor configuration, which helps reduce parasitic capacitances and improve switching speed. It delivers a maximum power dissipation of 900 mW and can operate reliably within a temperature range from -55°C up to 150°C, ensuring suitability for harsh industrial and electronic environments.

Key electrical characteristics include a maximum drain-source resistance (Rds) of 450 mΩ, a typical gate charge of 1.64 nC at the gate-source voltage, and a forward voltage drop of 0.83 V. The device incorporates two elements per chip, providing enhanced performance benefits.

Physical dimensions are optimized for high-density mounting, measuring 3 mm in length, 1.7 mm in width, and 1 mm in height. The isolated design facilitates reduced switching losses and noise, making it suited for applications in power management, industrial controls, and electronic equipment.

Features isolated transistor configuration with enhancement channel mode for reliable switching. Supports continuous drain current up to 680 mA and drain-source voltage up to 25 V. Compact SOT-23 package with 6 pins for space-saving PCB layouts.

Maximum power dissipation of 900 mW ensuring robust thermal management. Operates within a temperature range of -55°C to 150°C for diverse environments. Low typical gate charge of 1.64 nC enabling fast switching response.

Forward voltage drop of 0.83 V minimizes power loss during conduction. Pin layout and size (3 mm length, 1.7 mm width, 1 mm height) optimized for surface mount technology. Designed with 2 elements per chip for improved performance and efficiency.

Complies with no automotive standards; suitable for general industrial and electronic applications.

This MOSFET is widely used in industrial electronics, power supply design, consumer electronics, and automotive circuits where efficient low-voltage power switching is required. Its rugged design and thermal tolerance make it suitable for applications involving switching regulators, power converters, and motor control circuits.

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