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onsemi P-Channel MOSFET 120 mA 60 V Enhancement Mode 3-Pin SOT-23 Package NDS0610
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 930μm |
| Length | 2.92mm |
| Model | NDS0610 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | NDS0605 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 120mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 10Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 360mW |
| Typical Gate Charge Qg @ Vgs | 1.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.5V |
Key Features
- Enhancement mode P-Channel MOSFET suitable for fast switching.
- Maximum drain current of 120 mA ensures efficient load handling.
- Drain-source voltage rated at 60 V for medium voltage applications.
- Mount type is surface mount, supporting compact PCB layouts.
- Compact SOT-23 package with 3 pins facilitates easy integration.
- Maximum gate-source voltage range of -20 V to +20 V ensuring gate protection.
- Low typical gate charge of 1.8 nC for efficient gate drive.
- Maximum power dissipation of 360 mW supports moderate thermal loads.
Product Description
onsemi NDS0610 is a high-density cell P-Channel MOSFET transistor optimized for reliable and rugged performance in industrial and electronic applications. This device operates as an enhancement mode transistor with a maximum continuous drain current rating of 120 mA and a drain-source voltage rating of 60 V, making it suitable for medium voltage switching.
Designed using ON Semiconductor's proprietary DMOS technology, the MOSFET offers low on-state resistance to improve efficiency and reduce power loss during switching operations. The device is housed in a compact 3-pin SOT-23 surface mount package, facilitating easy incorporation in space-constrained printed circuit boards.
Key operating parameters include a maximum gate-source voltage range of -20 V to +20 V, typical gate charge of 1.8 nC at Vgs, and maximum power dissipation of 360 mW. The transistor supports a wide operating temperature range from -55°C to 150°C, allowing robust performance in varied environmental conditions.
This MOSFET is applicable in load switching, DC/DC converters, battery protection circuits, power management solutions, and DC motor control circuits. Its compact size and reliable switching capabilities suit applications in industrial electronics, consumer devices, telecommunications, and automotive electronics, although no specific automotive standard compliance is declared.
Enhancement mode P-Channel MOSFET suitable for fast switching. Maximum drain current of 120 mA ensures efficient load handling. Drain-source voltage rated at 60 V for medium voltage applications. Surface mount 3-pin SOT-23 package for compact PCB layouts.
Gate-source voltage range of -20 V to +20 V providing gate protection. Low gate charge of 1.8 nC for minimal drive power consumption. Power dissipation up to 360 mW supports moderate thermal loads. Wide operating temperature range from -55°C to 150°C for diverse conditions.
Compact device dimensions facilitate integration in electronics systems. Utilizes ON Semiconductor's DMOS technology for superior performance. Explore the full range of onsemi MOSFETs and electronic components at EnvMart for industrial, laboratory, and manufacturing applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 mA.
The drain-source voltage rating is 60 V, making it suitable for medium voltage applications.
This MOSFET is housed in a compact SOT-23 surface mount package.
The typical gate charge is 1.8 nC at Vgs, which helps minimize drive power consumption.
The maximum power dissipation is 360 mW, supporting moderate thermal loads.
The operating temperature range is from -55°C to 150°C, allowing for robust performance in varied conditions.
The maximum gate-source voltage range is -20 V to +20 V, providing gate protection.
This model has a pin count of 3, suitable for compact PCB layouts.
It utilizes a P-channel type, operating in enhancement mode.
The forward voltage is -1.5 V.
This MOSFET is applicable in load switching, DC/DC converters, battery protection circuits, and power management solutions.
It is designed using ON Semiconductor's proprietary DMOS technology to improve efficiency and reduce power loss during switching operations.
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