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Nexperia Type N-Channel Enhancement MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 PMV55ENEAR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | PMV55ENEAR |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 3.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.36W |
| Typical Gate Charge Qg @ Vgs | 12.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Type N-channel enhancement mode Field-Effect Transistor for efficient switching.
- Maximum continuous drain current of 3.1 amperes suitable for moderate power applications.
- Operating voltage up to 60 volts for versatile use cases.
- Compact 3-pin SOT-23 plastic surface-mount package.
- High maximum power dissipation rating of 8.36 watts for thermal reliability.
- Typical gate charge of 12.7 nanocoulombs supporting fast switching speeds.
- Wide temperature range from -55°C to 150°C for automotive and industrial environments.
- AEC-Q101 compliant automotive standard for quality and reliability in vehicle electronics.
Product Description
Nexperia PMV55ENEAR Type N-Channel Enhancement MOSFET delivers reliable switching for automotive and industrial electronic applications, featuring a continuous drain current rating of 3.1 amperes and durable operation up to 150°C.
This device is packaged in a compact 3-pin SOT-23 surface-mount plastic package using advanced trench MOSFET technology, enabling very fast switching performance with a maximum drain-source voltage of 60 volts. The low gate charge of 12.7 nC aids in efficient circuit control.
It complies with the AEC-Q101 automotive standard, making it ideal for power control needs in engine management, body, or chassis electronics. The MOSFET provides robust ElectroStatic Discharge (ESD) protection above 2 kV HBM level and is rated for thermally demanding environments.
The device supports repetitive avalanche rating, enhancing durability in fluctuating power conditions. Typical package dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height.
Type N-channel enhancement mode Field-Effect Transistor. Maximum continuous drain current: 3.1 A. Drain-source voltage: 60 V. Maximum power dissipation: 8.36 W. Operating temperature range: -55°C to 150°C. AEC-Q101 compliant automotive grade.
Trench MOSFET technology with ESD protection > 2 kV. Compact 3-pin SOT-23 package for surface mounting.
Well-suited for use in automotive, industrial, and consumer electronics requiring efficient power switching. Explore more semiconductor products on EnvMart for comprehensive electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.1 amperes.
This MOSFET has a maximum drain-source voltage rating of 60 volts.
It comes in a compact 3-pin SOT-23 surface-mount package.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation rating for this model is 8.36 watts.
The typical gate charge is 12.7 nanocoulombs.
It complies with the AEC-Q101 automotive standard.
The maximum gate-source voltage for this device is 20 volts.
This model uses a Type N-channel enhancement mode.
The dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height.
It is well-suited for automotive, industrial, and consumer electronics requiring efficient power switching.
The maximum drain-source resistance is 120 milliohms.
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