onsemi PowerTrench Type P-Channel MOSFET, 13 A, 30 V Enhancement Mode, 8-Pin SOIC FDS6679AZ

onsemi FDS6679AZ PowerTrench Type P-Channel MOSFET offers robust performance as a discrete semiconductor device designed for high-efficiency power switching applications. This enhancement mode MOSFET is optimized for surface mount installation featuring an 8-Pin SOIC package that measures 5 mm in length, 4 mm in width, and 1.5 mm in height.

The device supports a maximum continuous drain current of 13 amps and a maximum drain-source voltage of 30 volts, enabling reliable operation in medium-power environments. Thanks to the advanced PowerTrench technology, this MOSFET achieves low on-resistance (9 milliohms) and reduced gate charge (68 nanoCoulombs), which contributes to minimized switching losses and improved energy efficiency.

The FDS6679AZ utilizes a shielded-gate structure that balances charge and enhances figure of merit (FOM) compared to earlier MOSFET generations. Its integrated soft reverse recovery body diode allows elimination of snubber circuits or replacement of higher voltage MOSFETs, improving overall system design and cost-effectiveness.

It is rated for operation from -55°C to 150°C, making it suitable for demanding industrial, automotive, and consumer electronics applications where thermal stability and durability are critical. Typical use cases include AC/DC power supplies, synchronous rectification, DC motor controls, voltage regulators, and general switching circuits.

Key construction features include an 8-pin SOIC surface mount package that ensures compact PCB layout and straightforward assembly. The maximum power dissipation of 2.5 watts and maximum gate-source voltage of ±25 volts provide operational flexibility and protection.

PowerTrench technology enhances system efficiency and power density. Maximum power dissipation of 2.5 W supports reliable operation. Low typical gate charge of 68 nC enables fast switching performance. Supports operating temperature range from -55°C up to 150°C.

Low drain-source resistance of 9 milliohms reduces conduction losses. Maximum gate-source voltage rating of ±25 V ensures gate protection. Compact SOIC package with 1.5 mm height, 5 mm length, and 4 mm width. Soft body diode characteristic benefits synchronous rectification applications.

Designed for surface mount assembly in power management and switching circuits.

This onsemi PowerTrench MOSFET FDS6679AZ is included in EnvMart’s semiconductor component catalog for discrete semiconductor devices. The product suits industrial, laboratory, consumer electronics, and automotive sectors requiring efficient, reliable power switches.