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onsemi P-Channel MOSFET, Enhancement Mode, 8.8 A, 30 V, 8-Pin SOIC FDS4435BZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS4435BZ |
| Width | 4mm |
| Mount Type | Surface |
| Series | FDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 29nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.2V |
Key Features
- Operates with a maximum continuous drain current of 8.8 amperes.
- Supports a maximum drain-source voltage of 30 volts.
- Utilizes enhancement mode channel technology for improved switching.
- Features a compact 8-pin SOIC surface mount package for easy PCB integration.
- Maximum drain-source resistance of 20 milliohms ensures efficient conductivity.
- Capable of dissipating up to 2.5 watts in power.
- Functions reliably in temperatures ranging from -55°C to 150°C.
- Designed with a typical gate charge of 29 nanocoulombs at Vgs for fast switching.
Product Description
onsemi FDS4435BZ is a P-Channel enhancement mode MOSFET designed for efficient power switching applications. It supports a maximum continuous drain current of 8.8 amperes and a maximum drain-source voltage rating of 30 volts, making it suitable for low voltage power management.
The device is housed in an 8-pin SOIC package designed for surface mounting, offering a compact footprint suitable for modern electronic designs. With a low maximum drain-source resistance of 20 milliohms, it ensures minimal conduction losses enhancing energy efficiency in circuits.
It is designed to operate over a wide temperature range, from -55°C to 150°C, providing reliability in demanding industrial, automotive, and commercial electronics environments.
The typical gate charge of 29 nanocoulombs at Vgs allows for faster switching performance suitable for high-frequency applications. The MOSFET supports a wide gate-source voltage range of -25 to +25 volts, accommodating various control circuit requirements.
Operates with a maximum continuous drain current of 8.8 amperes. Supports a maximum drain-source voltage of 30 volts. Utilizes enhancement mode channel technology for improved switching. Features a compact 8-pin SOIC surface mount package for easy PCB integration.
Maximum drain-source resistance of 20 milliohms ensures efficient conductivity. Capable of dissipating up to 2.5 watts in power. Functions reliably in temperatures ranging from -55°C to 150°C. Designed with a typical gate charge of 29 nanocoulombs at Vgs for fast switching.
Supports a maximum gate-source voltage range of -25 to +25 volts. Compact dimensions with 5 mm length, 4 mm width, and 1.5 mm height.
This MOSFET is ideal for use in industrial electronics, power management circuits, automotive applications, and various commercial electronic devices requiring reliable P-Channel MOSFET transistors.
Explore a broad selection of semiconductor devices and MOSFETs at EnvMart to fit your technical and industrial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.8 amperes.
It supports a maximum drain-source voltage of 30 volts.
This model is housed in an 8-pin SOIC surface mount package.
The maximum drain-source resistance is 20 milliohms.
It has a typical gate charge of 29 nanocoulombs at Vgs.
This model operates reliably in temperatures ranging from -55°C to 150°C.
It can dissipate up to 2.5 watts in power.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
It supports a maximum gate-source voltage range of -25 to +25 volts.
This model utilizes a P-Channel enhancement mode channel type.
It is suitable for industrial electronics, power management circuits, automotive applications, and various commercial electronic devices.
The forward voltage is -1.2 volts.
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