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onsemi PowerTrench N-Channel MOSFET 40A 150V Enhancement 8-Pin WDFN FDMS86200DC
Specifications
| Country of Origin | Germany |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 5.1mm |
| Model | FDMS86200DC |
| Width | 5.85mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 35mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The MOSFET uses PowerTrench technology for efficient power handling.
- Maximum continuous drain current is rated at 40A.
- Supports maximum drain-source voltage of 150V for robust operation.
- Package type is compact 8-pin WDFN ensuring surface mount compatibility.
- Drain-source resistance Rds(on) is 35 milliohms to minimize conduction losses.
- Maximum power dissipation rating is 125W for thermal robustness.
- Operating temperature ranges from -55°C to 150°C suitable for harsh environments.
- Gate charge is typically 30nC at Vgs for effective switching performance.
Product Description
onsemi FDMS86200DC is a PowerTrench type N-Channel MOSFET designed for high-efficiency power switching applications. It features a maximum continuous drain current of 40 amperes and a drain-source voltage rating of 150 volts. Its enhancement mode design ensures reliable and precise control of current flow.
Encapsulated in an 8-pin WDFN surface mount package, the device offers compact dimensions (5.1 mm length, 5.85 mm width, and 1 mm height) suitable for space-constrained industrial and electronic circuit boards.
The MOSFET provides a low maximum on-resistance (Rds(on)) of 35 milliohms, minimizing power losses during conduction. Its typical gate charge of 30 nC at the gate-source voltage level ensures swift switching performance, contributing to improved overall circuit efficiency.
With a maximum power dissipation of 125 watts and an operating temperature range from -55°C to 150°C, this MOSFET can withstand demanding thermal conditions in industrial, automotive, and electronic power management systems.
PowerTrench technology enhances device efficiency and reliability. Continuous drain current capacity of 40A allows high power handling. 150V maximum drain-source voltage supports robust operation in high voltage circuits.
Compact 8-pin WDFN package facilitates surface mount assembly. Low Rds(on) value of 35 milliohms reduces conduction losses. High maximum power dissipation rating of 125W ensures thermal stability. Wide operating temperature range (-55°C to 150°C) suits diverse environments.
Typical gate charge of 30nC supports rapid switching. Maximum gate-source voltage of ±20V protects the MOSFET gate. Forward voltage approximately 1.3V optimizes conduction efficiency. Compact physical dimensions improve board layout flexibility.
This MOSFET is ideal for use in industrial power supplies, automotive electronics, and electronic component systems where high current and voltage capability combined with efficiency are required.
This product is manufactured in Germany, confirming high production quality and standards. Discover more power semiconductor devices and electronic components for demanding applications in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 40A.
This MOSFET supports a maximum drain-source voltage of 150V.
It comes in a compact 8-pin WDFN surface mount package.
The maximum drain-source resistance (Rds(on)) is 35 milliohms, which helps minimize conduction losses.
The typical gate charge at Vgs is 30nC, which contributes to effective switching performance.
The dimensions are 5.1 mm in length, 5.85 mm in width, and 1 mm in height.
The maximum power dissipation rating is 125W, ensuring thermal robustness.
It operates within a temperature range of -55°C to 150°C, suitable for harsh environments.
The forward voltage is approximately 1.3V, optimizing conduction efficiency.
This model features an N-channel type, designed for high-efficiency power switching applications.
The maximum gate-source voltage is ±20V, which protects the MOSFET gate.
This product is manufactured in Germany, confirming high production quality and standards.
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