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onsemi QFET Type P-Channel MOSFET, 1.8 A, 150 V Enhancement Mode, 8-Pin MLP Package FDMC2523P

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onsemi QFET Type P-Channel MOSFET, 1.8 A, 150 V Enhancement Mode, 8-Pin MLP Package FDMC2523P

Name: onsemi QFET Type P-Channel MOSFET, 1.8 A, 150 V Enhancement Mode, 8-Pin MLP Package FDMC2523P
Brand: onsemi
SKU: 207530
Price: 1.37 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	950μm
Length	3mm
Model	FDMC2523P
Width	3mm
Mount Type	Surface
Series	QFET
Maximum Operating Temperature	150°C
Package Type	MLP
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	1.8A
Maximum Drain Source Voltage Vds	150V
Maximum Drain Source Resistance Rds	3.6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	42W
Typical Gate Charge Qg @ Vgs	6.2nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	-5V

Key Features

This device features an enhancement mode channel with a maximum continuous drain current of 1.8 A.
The maximum drain-source voltage rating is 150 V suitable for power switching applications.
It is housed in a compact 8-pin MLP package sized 3 mm by 3 mm by 0.95 mm.
The maximum drain-source resistance (Rds) is 3.6 ohms, minimizing conduction losses.
Maximum power dissipation rating of 42 W ensures robust thermal performance.
Device operates over a temperature range of -55°C to 150°C for reliability in harsh environments.
Typical gate charge at specified gate voltage is 6.2 nC, enabling efficient switching.
Suitable for power supplies, PFC circuits, DC-DC converters, lighting ballasts, and motion control.

Product Description

onsemi FDMC2523P is a QFET Type P-Channel MOSFET designed for enhancement mode operation with a maximum continuous drain current of 1.8 A and drain-source voltage rating of 150 V. Packaged in an 8-pin MLP surface mount package measuring 3 mm in length and width and 0.95 mm in height, this MOSFET enables compact and efficient design integration.

The device has a maximum drain-source resistance of 3.6 ohms, which results in reduced on-state losses during operation. Its maximum power dissipation is 42 W, allowing for reliable performance under demanding thermal conditions. The gate voltage range extends from -30 V to +30 V, with a typical gate charge of 6.2 nC, which helps in minimizing switching losses and improving efficiency.

Operating temperature range spans from -55°C to 150°C, enabling use in industrial and commercial environments requiring robust thermal stability. This P-Channel MOSFET is ideal for applications such as power supplies, power factor correction circuits, DC-DC converters, plasma display panels, lighting ballasts, and motion control systems.

The compact MLP package facilitates surface mounting and space saving on PCBs, supporting modern electronic component designs. Without automotive-specific standards or certifications, it targets general-purpose power electronic applications.

This MOSFET offers low on-resistance for high efficiency. Robust power dissipation ensures stable operation under load. Wide operating temperature range enhances reliability in harsh conditions. Compact 8-pin MLP package supports dense circuit layouts.

Used in power management applications including DC-DC converters and lighting ballasts. For more electronics and semiconductor components, explore the Electronics & Electricals category in EnvMart.