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Vishay N-Channel Power MOSFET 4.6 A, 500 V Enhancement, 3-Pin TO-220FP IRFI840GPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Model | IRFI840GPBF |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.6A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 0.85Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
| N-isolated MOSFET,IRFI840G 4.6A 500VBrand | Vishay |
Key Features
- Enhancement mode N-Channel MOSFET optimized for power switching.
- Maximum continuous drain current of 4.6 amperes.
- Maximum drain-source voltage rating of 500 volts ensures durability under high voltage.
- Comes in a 3-Pin TO-220FP through hole package for ease of mounting.
- Maximum power dissipation rating of 40 watts supports efficient thermal management.
- Supports a typical gate charge of 67 nanocoulombs at Vgs for fast switching.
- Forward voltage drop of 2 volts at rated current.
- Wide operating temperature range from -55°C to 150°C for industrial applications.
Product Description
Vishay IRFI840GPBF is a robust N-Channel Power MOSFET ideal for electronic circuits requiring efficient power switching capabilities. With a continuous drain current capability of 4.6 A and a maximum drain-source voltage of 500 V, this MOSFET is tailored for high voltage and moderate current applications.
Encased in a TO-220FP package with 3 pins, it supports through-hole mounting suited for industrial and electronic assembly. The enhancement mode operation provides reliable switching performance, essential for power management roles in power supplies, inverters, motor drivers, and other industrial electronic assemblies.
The device allows a maximum power dissipation of 40 W, enabling it to operate effectively within thermal constraints. It exhibits a typical gate charge of 67 nC at the gate-source voltage, supporting rapid switching essential for modern electronic applications.
Designed to operate over a broad temperature range from -55°C up to 150°C, the IRFI840GPBF is suitable for harsh industrial environments and ensures stable performance under varying temperature conditions.
The maximum gate-source voltage rating of ±20 V protects the MOSFET from gate overstress while the forward voltage of 2 V limits conduction losses. This product complies with RoHS standards, adhering to environmental regulations.
Enhancement mode N-Channel MOSFET. Maximum continuous drain current: 4.6 A. Maximum drain-source voltage: 500 V. TO-220FP 3-pin through-hole package. Maximum power dissipation: 40 W. Typical gate charge: 67 nC at Vgs. Operating temperature range: -55°C to 150°C.
Maximum gate-source voltage: ±20 V. Forward voltage drop: 2 V. RoHS compliant.
This Vishay Power MOSFET is widely used in industrial electronics, power management systems, automotive electronics, and general semiconductor switching applications. EnvMart offers this product with assured quality and comprehensive technical support, allowing engineers and technicians to integrate this reliable MOSFET into various circuit designs effectively.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.6 A.
It has a maximum drain-source voltage rating of 500 V.
This MOSFET is housed in a 3-pin TO-220FP through-hole package.
The maximum power dissipation rating is 40 W.
The typical gate charge at Vgs is 67 nanocoulombs (nC).
It operates over a wide temperature range from -55°C to 150°C.
The forward voltage drop at rated current is 2 V.
The maximum gate-source voltage ratings are ±20 V.
This model is an N-Channel MOSFET.
The maximum drain-source resistance is 0.85 Ω.
Yes, this product complies with RoHS standards.
It is suitable for power management systems, automotive electronics, and general semiconductor switching applications.
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