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Vishay N-Channel Power MOSFET 400 V, 1.2 A, Enhancement Mode, TO-220AB Package IRF710PBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRF710PBF
Width 4.7mm
Mount Type Through Hole
Series IRF710
Maximum Operating Temperature 150°C
Package Type TO-220AB
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 1.2A
Maximum Drain Source Voltage Vds 400V
Maximum Drain Source Resistance Rds 3.6Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 36W
Typical Gate Charge Qg @ Vgs 17nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.6V
N-channel MOSFET,IRF710 2A 400VBrand Vishay

Key Features

  • Features a durable TO-220AB package suitable for through-hole mounting.
  • Supports maximum power dissipation of 36 W for moderate power applications.
  • High-voltage 400 V drain-source rating enables robust switching capability.
  • Low on-resistance of 3.6 Ohms to minimize conduction losses under light loads.
  • Typical gate charge of 17 nC ensures predictable switching performance.
  • Operates reliably across temperatures from -55°C to 150°C.
  • Withstands ±20 V gate-source voltage allowing standard gate drive voltages.
  • Ideal for power supplies, inverters, snubber circuits, and protection networks.

Product Description

Vishay IRF710PBF is a high-voltage N-Channel Power MOSFET with a maximum continuous drain current of 1.2 A and a drain-to-source voltage rating of 400 V. This enhancement-mode device is packaged in a reliable TO-220AB through-hole mount format, making it suitable for various industrial and electronic applications.

Designed to operate efficiently within a wide thermal range from -55°C to 150°C, it supports a maximum power dissipation of 36 W, ensuring dependable performance under moderate load conditions. The device features a low drain-source on-resistance of 3.6 Ohms to reduce conduction losses when handling light loads, and a gate charge of 17 nC to facilitate controlled switching.

Its gate source voltage tolerance up to ±20 V allows compatibility with common gate drive circuits. The 3-pin TO-220AB package permits easy mounting on heatsinks or chassis to improve thermal management during high-power operations.

Commonly used in mains-linked switch-mode power supplies, inverter front-end circuits, and high-voltage regulators, the IRF710PBF is also suitable for snubber or clamp circuits in protection networks and for hobbyist PCB repairs. The device is RoHS compliant, supporting environmentally conscious manufacturing.

Durable TO-220AB package with three pins for through-hole mounting. High-voltage (400 V) capability for robust switching applications. Moderate power dissipation rating of 36 W for reliability. Low on-resistance reduces conduction losses at 1.2 A current.

Wide operating temperature from -55°C to +150°C. Gate charge of 17 nC for controlled switching characteristics. Rated for gate-source voltages of ±20 V for standard drive compatibility. Suitable for industrial, laboratory, and power electronics applications.

RoHS compliant for environmental safety standards.

Explore high-performance power semiconductor solutions like Vishay's IRF710PBF within the Electronics & Electricals category at EnvMart for reliable power management and switching efficiency.

Vishay N-Channel Power MOSFET 400 V, 1.2 A, Enhancement Mode, TO-220AB Package IRF710PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.2 A.

It has a drain-to-source voltage rating of 400 V.

This model supports a maximum power dissipation of 36 W.

The drain-source on-resistance is 3.6 Ohms, which helps minimize conduction losses under light loads.

The typical gate charge is 17 nC, ensuring predictable switching performance.

It operates reliably across a temperature range from -55°C to 150°C.

This model comes in a TO-220AB package suitable for through-hole mounting.

It can withstand gate-source voltages of ±20 V, allowing compatibility with standard gate drive circuits.

This power MOSFET has a total of 3 pins.

Yes, it is RoHS compliant, supporting environmental safety standards.

It is commonly used in power supplies, inverters, snubber circuits, and protection networks.

The dimensions are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.

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