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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF710PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF710 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.2A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 3.6Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 36W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
| N-channel MOSFET,IRF710 2A 400VBrand | Vishay |
Vishay IRF710PBF is a high-voltage N-Channel Power MOSFET with a maximum continuous drain current of 1.2 A and a drain-to-source voltage rating of 400 V. This enhancement-mode device is packaged in a reliable TO-220AB through-hole mount format, making it suitable for various industrial and electronic applications.
Designed to operate efficiently within a wide thermal range from -55°C to 150°C, it supports a maximum power dissipation of 36 W, ensuring dependable performance under moderate load conditions. The device features a low drain-source on-resistance of 3.6 Ohms to reduce conduction losses when handling light loads, and a gate charge of 17 nC to facilitate controlled switching.
Its gate source voltage tolerance up to ±20 V allows compatibility with common gate drive circuits. The 3-pin TO-220AB package permits easy mounting on heatsinks or chassis to improve thermal management during high-power operations.
Commonly used in mains-linked switch-mode power supplies, inverter front-end circuits, and high-voltage regulators, the IRF710PBF is also suitable for snubber or clamp circuits in protection networks and for hobbyist PCB repairs. The device is RoHS compliant, supporting environmentally conscious manufacturing.
Durable TO-220AB package with three pins for through-hole mounting. High-voltage (400 V) capability for robust switching applications. Moderate power dissipation rating of 36 W for reliability. Low on-resistance reduces conduction losses at 1.2 A current.
Wide operating temperature from -55°C to +150°C. Gate charge of 17 nC for controlled switching characteristics. Rated for gate-source voltages of ±20 V for standard drive compatibility. Suitable for industrial, laboratory, and power electronics applications.
RoHS compliant for environmental safety standards.
Explore high-performance power semiconductor solutions like Vishay's IRF710PBF within the Electronics & Electricals category at EnvMart for reliable power management and switching efficiency.
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