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Vishay N-Channel Power MOSFET 38 A 250 V Enhancement 3-Pin TO-247AC IRFP264PBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 20.7mm
Length 15.87mm
Model IRFP264PBF
Width 5.31mm
Mount Type Through Hole
Series IRFP264
Maximum Operating Temperature 150°C
Package Type TO-247AC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 38A
Maximum Drain Source Voltage Vds 250V
Maximum Drain Source Resistance Rds 75mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 280W
Typical Gate Charge Qg @ Vgs 210nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.8V
N-channel MOSFET,IRFP264 38A 250VBrand Vishay

Key Features

  • Provides 38 A maximum continuous drain current suitable for high-load applications.
  • Supports 250 V maximum drain-to-source voltage for medium-voltage operation.
  • Features low Rds(on) of 75 mΩ to reduce conduction losses.
  • Maximum power dissipation of 280 W enables effective thermal management.
  • Typical gate charge of 210 nC allows predictable switching performance.
  • Operates within a wide temperature range from -55°C to 150°C for harsh environments.
  • Uses a standard 3-pin TO-247AC through-hole package for easy PCB mounting.
  • Gate-source voltage tolerance of ±20 V ensures compatibility with various gate drives.

Product Description

Vishay IRFP264PBF is a robust N-Channel Power MOSFET tailored for demanding high-power switching and amplification applications. It supports a continuous drain current of 38 A and a drain-source voltage rating of 250 V, making it suitable for medium-voltage power stages and industrial electronics.

This device is housed in a through-hole TO-247AC package with 3 pins, allowing reliable insertion and soldering on PCBs with effective heat sinking. It features an enhancement mode channel and a maximum drain-source resistance of 75 milliohms to minimize conduction losses during operation.

The MOSFET is engineered to operate within an ambient temperature range from -55°C to 150°C, enabling usage in automotive-adjacent and industrial environments where thermal resilience is critical. With a typical gate charge of 210 nC and a maximum gate-source voltage tolerance of ±20 V, the IRFP264PBF is compatible with a wide range of driver circuits for predictable switching behavior.

Its power dissipation capability peaks at 280 watts, which requires careful thermal design using low thermal resistance mounting, copper area on the PCB, or external heat sinks, particularly when switching high currents continuously.

Common applications include motor driver output stages in industrial controllers, high-power DC-DC converters, inverters, switch-mode amplifiers for audio or radio-frequency systems, and battery management circuits requiring efficient switching components.

Provides 38 A maximum continuous drain current suitable for high-load applications. Supports 250 V maximum drain-to-source voltage for medium-voltage operation. Features low Rds(on) of 75 mΩ to reduce conduction losses. Maximum power dissipation of 280 W enables effective thermal management.

Typical gate charge of 210 nC allows predictable switching performance. Operates within a wide temperature range from -55°C to 150°C for harsh environments. Uses a standard 3-pin TO-247AC through-hole package for easy PCB mounting.

Gate-source voltage tolerance of ±20 V ensures compatibility with various gate drives. Ideal for industrial motor drivers, DC-DC converters, and power supply circuits. Explore EnvMart's electronics and semiconductor range for high-quality Power MOSFETs and related components designed to meet industrial and commercial application demands.

Vishay N-Channel Power MOSFET 38 A 250 V Enhancement 3-Pin TO-247AC IRFP264PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 38 A, making it suitable for high-load applications.

This MOSFET supports a maximum drain-source voltage of 250 V, suitable for medium-voltage operation.

It features a low Rds(on) of 75 mΩ, which helps to reduce conduction losses during operation.

The maximum power dissipation for this model is 280 W, enabling effective thermal management in applications.

The typical gate charge for this MOSFET is 210 nC, allowing for predictable switching performance.

It operates within a wide temperature range from -55°C to 150°C, suitable for harsh environments.

This device uses a standard 3-pin TO-247AC through-hole package, facilitating easy PCB mounting.

The maximum gate-source voltage tolerance for this model is ±20 V, ensuring compatibility with various gate drives.

The dimensions of this MOSFET are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.

Common applications include motor driver output stages, high-power DC-DC converters, and switch-mode amplifiers.

Yes, it complies with RoHS standards, ensuring environmental safety in its application.

This model is an N-channel MOSFET, designed for enhancement mode operation.

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