$0.75
$0.72
Tax included
World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFBC20PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFBC20 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.2A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 4.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
| N-Channel MOSFET Transistor, 2.2 A, 600 V, 3-Pin TO-220AB Vishay IRFBC20Brand | Vishay |
Vishay IRFBC20PBF is a high-voltage N-channel power MOSFET designed for use in power conversion, control circuits, and industrial switching applications. It operates as an enhancement-mode transistor with a maximum drain-source voltage rating of 600 volts and supports a continuous drain current of 2.2 amperes.
Encapsulated in a reliable 3-pin TO-220AB through-hole package, it allows straightforward mounting and excellent heat dissipation when paired with suitable heatsinks. The device is engineered for use across a wide industrial temperature range from -55°C up to 150°C, providing durability in harsh environments.
With a low on-resistance of 4.4 ohms, this MOSFET minimizes conduction losses, ensuring efficient energy usage. The typical gate charge of 18 nanocoulombs ensures predictable and responsive switching performance, and the maximum gate-source voltage of ±20 volts protects the transistor's gate oxide from damage. Rated for 50 watts maximum power dissipation, the IRFBC20PBF can handle sustained power loads effectively.
This Power MOSFET is ideal for high-voltage power supplies, switch-mode power controllers in industrial equipment, and discrete driver stages used in motor control interfaces. Its use also extends to snubber and clamp circuits in power systems, as well as laboratory prototyping environments where through-hole mounting is advantageous.
Supports 2.2 A continuous drain current for moderate loads. 600 V maximum drain-source voltage for robust high-voltage switching. Low Rds(on) of 4.4 Ω for lower conduction losses. Through-hole TO-220AB package facilitates heat sinking and mounting.
Wide operating temperature range from -55°C to 150°C. 18 nC typical gate charge allows efficient switching. Maximum gate-source voltage rating ±20 V safeguards gate oxide. 50 W maximum power dissipation supports thermal demands.
RoHS compliant for environmental safety.
This product is a dependable choice in industrial, laboratory, and manufacturing settings requiring efficient high-voltage power switching capabilities. Explore more power semiconductors and MOSFETs at EnvMart for your industrial applications.
Review sent
Your review cannot be sent
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent