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Vishay N-Channel Power MOSFET 2.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFBC20PBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRFBC20PBF
Width 4.7mm
Mount Type Through Hole
Series IRFBC20
Maximum Operating Temperature 150°C
Package Type TO-220AB
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 2.2A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 4.4Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 50W
Typical Gate Charge Qg @ Vgs 18nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 2V
N-Channel MOSFET Transistor, 2.2 A, 600 V, 3-Pin TO-220AB Vishay IRFBC20Brand Vishay

Key Features

  • Supports a continuous drain current of 2.2 amperes for moderate load applications.
  • Features a maximum drain-source voltage of 600 volts for high-voltage switching.
  • Comes in a 3-pin TO-220AB through-hole package for easy mounting and heat dissipation.
  • Operates as an enhancement-mode device offering reliable switching and amplification.
  • Maximum power dissipation of 50 watts ensures sustained thermal performance.
  • Low on-resistance of 4.4 ohms reduces conduction losses during operation.
  • Typical gate charge of 18 nanocoulombs enables predictable switching behavior.
  • Designed to operate within -55°C to 150°C for harsh industrial temperature conditions.

Product Description

Vishay IRFBC20PBF is a high-voltage N-channel power MOSFET designed for use in power conversion, control circuits, and industrial switching applications. It operates as an enhancement-mode transistor with a maximum drain-source voltage rating of 600 volts and supports a continuous drain current of 2.2 amperes.

Encapsulated in a reliable 3-pin TO-220AB through-hole package, it allows straightforward mounting and excellent heat dissipation when paired with suitable heatsinks. The device is engineered for use across a wide industrial temperature range from -55°C up to 150°C, providing durability in harsh environments.

With a low on-resistance of 4.4 ohms, this MOSFET minimizes conduction losses, ensuring efficient energy usage. The typical gate charge of 18 nanocoulombs ensures predictable and responsive switching performance, and the maximum gate-source voltage of ±20 volts protects the transistor's gate oxide from damage. Rated for 50 watts maximum power dissipation, the IRFBC20PBF can handle sustained power loads effectively.

This Power MOSFET is ideal for high-voltage power supplies, switch-mode power controllers in industrial equipment, and discrete driver stages used in motor control interfaces. Its use also extends to snubber and clamp circuits in power systems, as well as laboratory prototyping environments where through-hole mounting is advantageous.

Supports 2.2 A continuous drain current for moderate loads. 600 V maximum drain-source voltage for robust high-voltage switching. Low Rds(on) of 4.4 Ω for lower conduction losses. Through-hole TO-220AB package facilitates heat sinking and mounting.

Wide operating temperature range from -55°C to 150°C. 18 nC typical gate charge allows efficient switching. Maximum gate-source voltage rating ±20 V safeguards gate oxide. 50 W maximum power dissipation supports thermal demands.

RoHS compliant for environmental safety.

This product is a dependable choice in industrial, laboratory, and manufacturing settings requiring efficient high-voltage power switching capabilities. Explore more power semiconductors and MOSFETs at EnvMart for your industrial applications.

Vishay N-Channel Power MOSFET 2.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFBC20PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.2 amperes, suitable for moderate load applications.

It has a maximum drain-source voltage rating of 600 volts, making it suitable for high-voltage switching applications.

This model comes in a 3-pin TO-220AB through-hole package, which facilitates easy mounting and heat dissipation.

It operates within a temperature range of -55°C to 150°C, making it suitable for harsh industrial environments.

The typical gate charge is 18 nanocoulombs, which allows for predictable switching behavior.

This MOSFET has a maximum power dissipation rating of 50 watts, supporting sustained thermal performance.

It features a low on-resistance of 4.4 ohms, which helps to reduce conduction losses during operation.

The maximum gate-source voltage rating is ±20 volts, which protects the gate oxide from damage.

The dimensions of this MOSFET are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.

Yes, the IRFBC20PBF is RoHS compliant, ensuring it meets environmental safety standards.

It is designed for use in power conversion, control circuits, and industrial switching applications, among others.

This model uses an N-channel configuration and operates as an enhancement-mode device.

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