DiodesZetex Bipolar Power Transistor, NPN, 9 A Collector Current, 20 V Collector Emitter Voltage, 4-Pin ZXTN19020DGTA

The DiodesZetex ZXTN19020DGTA is a high-performance bipolar power transistor designed for electronic components and power connector applications. As an NPN transistor, it supports a maximum DC collector current of 9 amps and a collector emitter voltage of up to 20 volts, making it suitable for medium-power amplification and switching tasks. It is housed in a compact 4-pin SOT-223 surface mount package, facilitating efficient heat dissipation and easy integration into printed circuit boards using surface mount technology.

Featuring a single transistor configuration with a minimum current gain of 50, this transistor enables effective current amplification and switching operations. The device can operate in harsh industrial environments with temperatures ranging from -55°C to 150°C, ensuring reliability under extreme conditions. Its maximum power dissipation rating of 9.4 watts allows sustained performance under moderate power loads without degradation.

The maximum transition frequency of 160 MHz makes the ZXTN19020DGTA transistor suited for high-speed switching and RF amplifier circuits. It also complies with the automotive standard AEC-Q101, ensuring enhanced reliability and quality for automotive electronic systems. The 4-pin SOT-223 package dimensions are compact - with a height of 1.65 mm, length of 6.55 mm, and width of 7.1 mm - supporting space-efficient PCB layouts.

This transistor finds wide applications in power management, amplification, and switching circuits within industrial, automotive, and consumer electronic devices, where robustness, speed, and power capacity are critical. Its surface mount form factor enables automated assembly, improving production efficiency and device consistency.

Supports maximum DC collector current of 9 A for high current handling. Collector emitter voltage rated at 20 V for medium-voltage applications. Surface mount 4-pin SOT-223 package for compact and efficient mounting. Single NPN transistor configuration optimized for bipolar switching functions.

Maximum power dissipation of 9.4 W enables durable operation. Wide operating temperature range from -55°C to 150°C for industrial reliability. Minimum DC current gain of 50 ensures effective amplification. High transition frequency of 160 MHz suited for fast switching.

Automotive standard AEC-Q101 qualified for automotive-grade applications. Explore this transistor as part of the Semiconductors category on EnvMart for your next electronic engineering project, ensuring reliable and efficient performance.

Explore more products in our Bipolar Transistors category.