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Infineon CoolMOS C3 N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 SPP06N80C3XKSA1

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Infineon CoolMOS C3 N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 SPP06N80C3XKSA1

Name: Infineon CoolMOS C3 N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 SPP06N80C3XKSA1
Brand: Infineon
SKU: 184482

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	15.95mm
Length	10.36mm
Model	SPP06N80C3XKSA1
Width	4.57mm
Mount Type	Through Hole
Series	CoolMOS C3
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS, JEDEC1
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	6A
Maximum Drain Source Voltage Vds	800V
Maximum Drain Source Resistance Rds	0.9Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	83W
Typical Gate Charge Qg @ Vgs	31nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.2V

Key Features

Maximum continuous drain current of 6 amperes ensuring reliable current handling.
High maximum drain-source voltage of 800 volts suitable for demanding circuits.
Low maximum drain-source resistance of 0.9 ohms for efficient conduction.
Operating temperature range from -55°C up to 150°C for versatile environmental tolerance.
Typical gate charge of 31 nC enabling fast switching capabilities.
Forward voltage drop of 1.2 volts optimizing power efficiency.
Robust TO-220 through-hole package with 3 pins suitable for standard mounting.
Compliance with RoHS and JEDEC1 standards ensuring industry quality.

Product Description

Infineon SPP06N80C3XKSA1 is a CoolMOS™ C3 series N-Channel power MOSFET featuring a maximum continuous drain current of 6 A and a maximum drain-source voltage of 800 V. This device uses enhancement mode channel operation and comes in a 3-pin TO-220 through-hole package, ideal for high-efficiency power conversion and switching applications.

Its low maximum drain-source resistance of 0.9 Ω reduces conduction losses, improving device efficiency. The MOSFET supports a broad operating temperature range from -55°C to +150°C, making it suitable for demanding industrial and electronic environments.

This transistor exhibits a typical gate charge of 31 nC at Vgs, facilitating rapid switching and better performance in pulse circuits. The device’s forward voltage is 1.2 V, which contributes to its overall power saving characteristics.

Infineon ensures quality and compliance with RoHS and JEDEC1 standards, certifying it for use in a variety of electronic component assemblies. Its compact physical dimensions of 15.95 mm height, 10.36 mm length, and 4.57 mm width accommodate PCB designs with ease.

Commonly employed in industrial power supplies, motor drives, inverters, and renewable energy systems, this MOSFET supports improved power density and reduced thermal management requirements.

Maximum continuous drain current of 6 amperes. Maximum drain-source voltage of 800 volts. Low drain-source resistance (0.9 ohms) minimizes power loss. Wide operating temperature range: -55°C to 150°C. Typical gate charge of 31nC for efficient switching.

Forward voltage drop of 1.2V. 3-pin TO-220 through-hole package for easy mounting. RoHS and JEDEC1 compliant. Compact dimensions: 15.95 mm x 10.36 mm x 4.57 mm.

This MOSFET is recommended for use in industrial, electronic, and power management applications due to its high efficiency, thermal durability, and compliance standards. Explore more in the MOSFET category on EnvMart for compatible semiconductor solutions and power electronics components.