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onsemi N-Channel MOSFET 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002LT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 940μm
Length 2.9mm
Model 2N7002LT1G
Width 1.3mm
Mount Type Surface
Series 2N7002L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 115mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 7.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 300mW
Typical Gate Charge Qg @ Vgs 160nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V
onsemi 2SD1816T-TL-H NPN Transistor, 4 A, 100 V, 3-Pin TP-FABrand onsemi

Key Features

  • Offers a maximum continuous drain current of 115 mA.
  • Supports a maximum drain-source voltage (Vds) of 60 V.
  • Features a low maximum drain-source resistance (Rds) of 7.5 Ω.
  • Designed with enhancement mode channel operation.
  • Limits maximum power dissipation to 300 mW.
  • Operates reliably between temperatures of -55°C to 150°C.
  • Utilizes a surface mount SOT-23 package with 3 pins.
  • Tolerates a maximum gate-source voltage range from -20 V to +20 V.

Product Description

onsemi brand 2N7002LT1G N-Channel MOSFET is a 60 V, 115 mA enhancement mode transistor designed for surface mount applications using a compact 3-pin SOT-23 package. It delivers reliable performance with a maximum power dissipation of 300 mW and low on-resistance of 7.5 Ω, ideal for efficient power switching in electronic circuits. The device supports a broad operating temperature range from -55°C to 150°C, ensuring stability in demanding industrial, electronic, and communication equipment environments.

With its maximum drain-source voltage rating at 60 V and a typical gate charge of 160 nC, this MOSFET provides fast switching capabilities with minimal losses, suitable for low power switching and load driving applications in power management, signal processing, and embedded systems.

The compact SOT-23 package allows for easy integration into densely packed PCBs, making it suitable for use in telecommunications, consumer electronics, industrial control, and automotive electronics that do not require automotive-grade standards.

Maximum continuous drain current of 115 mA for moderate load applications. Enhancement mode N-channel operation for reliable switching performance. Surface mount SOT-23 package with a minimal footprint for efficient board design.

Robust electrical limits: 60 V drain-source voltage and 7.5 Ω on-resistance. Operating temperature range from -55°C to 150°C for versatility in diverse environments. Maximum power dissipation of 300 mW to prevent overheating in compact assemblies.

Gate-source voltage tolerance of -20 to +20 V safeguards the transistor's integrity. Forward voltage drop of 1.2 V indicating efficiency during conduction.

This transistor is widely used in electronic circuits requiring low-voltage, low to moderate current switching, including power regulators, switching circuits, and signal amplification devices. Its surface mount configuration and electrical characteristics make it apt for industrial control systems, consumer electronic devices, and custom embedded solutions.

Explore more MOSFETs and discrete semiconductor components at EnvMart for various electronics design needs.

onsemi N-Channel MOSFET 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002LT1G
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