World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

Infineon BSZ N-Channel MOSFET 212 A 40 V 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1

Free Delivery in India | Lowest Global Shipping Charges

Infineon BSZ N-Channel MOSFET 212 A 40 V 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1

Name: Infineon BSZ N-Channel MOSFET 212 A 40 V 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1
Brand: Infineon
SKU: 178266
Price: 0.75 USD
Availability: InStock



Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	BSZ017NE2LS5IATMA1
Mount Type	Surface
Series	BSZ
Maximum Operating Temperature	175°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	212A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Optimized for high performance buck converters to enhance energy efficiency.
Features a monolithic integrated Schottky-like diode for improved operation.
Very low on-resistance of 0.7 milliohms at VGS = 4.5 V for minimal power loss.
100% avalanche tested ensuring high reliability under inductive load conditions.
Surface mount package type SuperSO8 5 x 6 mm ensures compact PCB integration.
Wide operating temperature range from -55°C to 175°C suitable for harsh environments.
Maximum Gate-Source voltage rating of ±20 V to protect against voltage spikes.
Typical gate charge of 80 nC contributing to efficient switching performance.

Product Description

The Infineon BSZ017NE2LS5IATMA1 is a high-performance N-Channel MOSFET designed for power electronics applications requiring high current and voltage. This MOSFET supports a continuous drain current of 212 A and can withstand a maximum drain-source voltage of 40 V, making it suitable for demanding power switching and regulation tasks.

Its 8-pin SuperSO8 (5 x 6 mm) surface mount package offers a compact footprint enabling efficient PCB layout in modern electronic designs. The device features a monolithic integrated Schottky-like diode, optimizing energy efficiency in buck converter applications.

With an exceptionally low on-resistance of 0.7 milliohms at a gate voltage of 4.5 V, this MOSFET minimizes conduction losses, enhancing overall system efficiency. The robust design is 100% avalanche tested, ensuring reliability under transient inductive load conditions encountered in industrial and automotive electronics.

Operational temperature range extends from -55°C to 175°C, suitable for use in industrial, automotive, and high-power density applications. The maximum gate-source voltage rating of ±20 V provides protection against voltage spikes, while the typical gate charge of 80 nC allows for fast and efficient switching.

Forward voltage of 1 V further supports efficient circuit operation. The product complies with RoHS and is halogen-free according to IEC61249-2-21 standards, supporting environmentally responsible manufacturing and disposal.

This MOSFET series is ideal for high power density voltage regulators, desktop and server power supplies, and automotive control systems. Infineon's OptiMOS™ 5 technology provides benchmark energy efficiency and power density for modern electronics.

Optimized for high performance buck converters. Includes monolithic integrated Schottky-like diode. Very low on-resistance of 0.7mΩ at VGS = 4.5V. 100% avalanche tested for reliability. Compact 8-pin SuperSO8 5 x 6 mm package.

Supports operating temperatures from -55°C to 175°C. Maximum gate-source voltage of ±20V. Typical gate charge of 80nC facilitates efficient switching. Complies with RoHS and is halogen-free per IEC standards. Explore more Infineon semiconductor products and high-quality MOSFETs at EnvMart for wide-ranging industrial and electronic applications.