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onsemi N-Channel MOSFET, 24 A Continuous Drain Current, 650 V Drain Source Voltage, Enhancement Mode, TO-220 NTP125N65S3H
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | NTP125N65S3H |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | NTP125N |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-Free and are RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET uses Enhancement mode for efficient switching.
- It features a TO-220 package with 3 pins suitable for through-hole mounting.
- Maximum continuous drain current is 24 A ensuring robust performance.
- Maximum drain-source voltage is 650 V for high voltage tolerance.
- Maximum power dissipation rate is 171 W for safe heat management.
- Ultra low typical gate charge of 44 nC improves switching efficiency.
- Device operates reliably between -55°C to 175°C temperature range.
- Low on-resistance of 125 mΩ helps minimize conduction losses.
Product Description
onsemi NTP125N65S3H N-Channel MOSFET is engineered for high-performance power switching and amplification in demanding industrial, automotive, and electronic systems. Featuring a durable TO-220 through-hole package with 3 pins, it supports a continuous drain current of 24 A and a drain-source voltage rating of 650 V. The device operates in enhancement mode providing fast switching with ultra-low gate charge (44 nC) which reduces power loss during switching events.
The MOSFET’s robust electrical characteristics include a maximum power dissipation of 171 W and low on-resistance of 125 mΩ, enabling efficient conduction with minimal heat generation. It withstands operating temperatures from -55°C to 175°C, making it suitable for harsh environments.
The forward voltage rating of 1.2 V contributes to optimized current flow with minimal voltage drop. This MOSFET is Pb-Free and RoHS compliant, ensuring it meets environmental standards. Its reliability is confirmed by 100% avalanche testing for robust transient tolerance. Applications include power management, motor drives, automotive electronics, and industrial control systems.
This MOSFET uses Enhancement mode for efficient switching. It features a TO-220 package with 3 pins suitable for through-hole mounting. Maximum continuous drain current is 24 A ensuring robust performance. Maximum drain-source voltage is 650 V for high voltage tolerance.
Maximum power dissipation rate is 171 W for safe heat management. Ultra low typical gate charge of 44 nC improves switching efficiency. Device operates reliably between -55°C to 175°C temperature range. Low on-resistance of 125 mΩ helps minimize conduction losses.
Forward voltage drop is 1.2 V ensuring efficient current flow. Compliant with Pb-Free and RoHS environmental regulations.
Choose the onsemi NTP125N65S3H for advanced power switching needs across industrial, automotive, and electronic applications. Explore more MOSFET devices or semiconductor components on EnvMart for your design and manufacturing requirements.
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Frequently Asked Questions
The maximum continuous drain current of this model is 24 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
It can dissipate a maximum power of 171 W, ensuring safe heat management during operation.
The typical gate charge is 44 nC, which enhances switching efficiency.
This unit operates reliably within a temperature range of -55°C to 175°C.
It features a TO-220 package that is suitable for through-hole mounting.
The on-resistance is 125 mΩ, which helps minimize conduction losses.
The forward voltage drop is 1.2 V, ensuring efficient current flow.
This model has 3 pins.
Yes, it is Pb-Free and RoHS compliant, meeting environmental regulations.
This MOSFET utilizes an N-channel type, operating in enhancement mode.
The maximum gate-source voltage rating for this model is 30 V.
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