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onsemi NVH N-Channel MOSFET 17.3A 1.2kV Enhancement 4-Pin TO-247 NVH4L160N120SC1
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 22.74mm |
| Length | 15.8mm |
| Model | NVH4L160N120SC1 |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | NVH |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 and PPAP Capable |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17.3A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 111W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 4V |
Key Features
- High continuous drain current rating of 17.3 A for robust performance.
- Maximum drain-source voltage of 1.2 kV suitable for high-voltage applications.
- Packaged in a 4-Pin TO-247 through-hole mount for easy integration.
- Low gate charge of 34 nC at typical gate-source voltage enhances switching speed.
- Maximum power dissipation of 111 W supports high power handling.
- Wide operating temperature range from -55°C to 175°C for reliability.
- RoHS compliant and AEC-Q101 qualified for automotive applications.
- Low drain-source resistance of 160 mΩ for efficient conduction.
Product Description
onsemi NVH4L160N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance power switching applications. This enhancement mode device operates at a maximum drain-source voltage of 1.2 kV and continuous drain current of 17.3 A, making it suitable for demanding applications such as automotive on-board chargers, DC-DC converters, and industrial power control systems.
The device is housed in a 4-pin TO-247 package suitable for through-hole mount configurations, enabling straightforward PCB assembly and effective thermal management. Featuring a low gate charge of 34 nC at 25 V gate-source voltage, it enables efficient switching with reduced gate drive losses.
It can dissipate up to 111 W of power and operates reliably across a wide temperature range from -55°C to 175°C, ensuring robustness in harsh environments. The device complies with automotive standard AEC-Q101 and is PPAP capable, affirming its quality and reliability for automotive use cases.
Additional features include low drain-source resistance of 160 mΩ for efficient conduction, forward voltage of 4 V, and high maximum gate-source voltage rating of 25 V. The compact dimensions of 22.74 mm height, 15.8 mm length, and 5.2 mm width facilitate its integration into space-constrained designs.
This MOSFET is 100% avalanche tested, ensuring device ruggedness against transient voltage spikes. It is RoHS compliant, promoting environmentally responsible manufacturing. High continuous drain current of 17.3 A enables powerful switching applications.
Robust 1.2 kV drain-source voltage rating for demanding environments. 4-Pin TO-247 through-hole package for ease of mounting. Low gate charge improves switching efficiency and reduces losses. Wide temperature operating range supports automotive and industrial uses.
Meets automotive standards with AEC-Q101 qualification. Compact physical dimensions optimize PCB space. High maximum power dissipation ensures thermal robustness.
Ideal for industrial, automotive, and high reliability power electronics applications, the onsemi NVH4L160N120SC1 provides a reliable and efficient solution for power conversion and control. Browse more power semiconductors and MOSFETs on EnvMart for your next design integration.
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Frequently Asked Questions
The maximum continuous drain current rating is 17.3 A, suitable for robust performance in power applications.
It has a maximum drain-source voltage of 1.2 kV, making it suitable for high-voltage applications.
The dimensions are 22.74 mm in height, 15.8 mm in length, and 5.2 mm in width.
This model is packaged in a 4-Pin TO-247 configuration, designed for through-hole mounting.
It can dissipate up to 111 W of power, supporting high power handling requirements.
The operating temperature range is from -55°C to 175°C, ensuring reliability in various environments.
The typical gate charge is 34 nC, enhancing switching speed and efficiency.
It is AEC-Q101 qualified and PPAP capable, affirming its quality for automotive applications.
The maximum gate-source voltage rating is 25 V, allowing for compatibility with various gate drive circuits.
The drain-source resistance is 160 mΩ, which contributes to efficient conduction.
It is suitable for applications such as automotive on-board chargers, DC-DC converters, and industrial power control systems.
The country of origin for this MOSFET is India.
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