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DiodesZetex PowerDI5060 8-Pin N-Channel Enhancement MOSFET, 98 A, 60 V, 6.2mΩ RDS(ON), 2.45W Pd DMT6006SPS-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 900μm |
| Length | 6.15mm |
| Model | DMT6006SPS-13 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | DMT6006 |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI5060 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 98A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 6.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.45W |
| Typical Gate Charge Qg @ Vgs | 27.9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features a low on-resistance of 6.2 milliohms to minimize conduction losses.
- It operates with a gate-source voltage of up to 20 V, suitable for efficient switching applications.
- Maximum power dissipation of 2.45 W allows for reliable thermal management.
- The device supports a wide temperature range from -55°C to 150°C operation.
- Compact dimensions include a length of 6.15 mm, width of 5.15 mm, and height of 900 μm.
- Typical gate charge at Vgs is 27.9 nC, balancing drive requirements and switching speed.
- The forward voltage drop is 1.2 V, enhancing overall efficiency in power circuits.
- Designed for surface mount applications with an 8-pin configuration.
Product Description
DiodesZetex DMT6006SPS-13 is a high-performance N-Channel enhancement MOSFET designed for power management in industrial, automotive, and electronic applications. It is capable of handling continuous drain currents up to 98 A and drain-source voltages up to 60 V, providing robust switching performance with minimal on-state resistance of 6.2 mΩ to reduce power losses.
This device is packaged in an 8-pin PowerDI5060 surface mount housing, suitable for compact PCB layouts. It features a maximum power dissipation of 2.45 W and operates efficiently within a temperature range from -55°C to 150°C, making it ideal for harsh environments and demanding thermal conditions.
The MOSFET gate-source voltage maximum is rated at 20 V, with a typical gate charge of 27.9 nC, enabling faster switching speeds while maintaining gate drive efficiency. Its dimensions (6.15 mm length, 5.15 mm width, and 900 µm height) optimize space utilization in modern electronic devices.
This enhancement-mode MOSFET offers a low forward voltage of 1.2 V, enhancing system efficiency especially in high current circuits. Common applications include power supply regulation, motor drive controls, and high-efficiency switching circuits in industrial automation and consumer electronics.
Manufactured in China under strict quality controls, the DMT6006SPS-13 meets industrial standards for reliable and consistent performance. Low RDS(ON) minimizes conduction losses to enhance efficiency. High drain current and voltage ratings support robust power management.
Compact PowerDI5060 8-pin surface mount package for space-saving designs. Wide operating temperature range suitable for industrial and automotive environments. Optimized gate charge for balance between switching speed and gate drive requirements.
Forward voltage optimized for efficiency in power circuits. Explore more power semiconductor devices in the Semiconductor category on EnvMart for your application needs.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 98 A.
It can handle a maximum drain-source voltage of 60 V.
This MOSFET features a low on-resistance of 6.2 mΩ.
The typical gate charge at Vgs is 27.9 nC, balancing drive requirements and switching speed.
The maximum power dissipation for this MOSFET is 2.45 W.
The dimensions of the PowerDI5060 package are 6.15 mm in length, 5.15 mm in width, and 900 μm in height.
It operates efficiently within a temperature range from -55°C to 150°C.
The maximum gate-source voltage is rated at 20 V.
This model is designed for power management in industrial, automotive, and electronic applications, including power supply regulation and motor drive controls.
It is designed for surface mount applications with an 8-pin configuration.
The forward voltage drop is 1.2 V, which enhances overall efficiency in power circuits.
This device is manufactured in China under strict quality controls.
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