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| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 750μm |
| Length | 3.15mm |
| Model | NVTFS6H888NTAG |
| Width | 3.15mm |
| Mount Type | Surface |
| Series | NVTFS6H888N |
| Maximum Operating Temperature | 175°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 18W |
| Typical Gate Charge Qg @ Vgs | 4.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
onsemi NVTFS6H888NTAG is a high-performance N-Channel MOSFET designed for automotive power applications requiring efficient switching and compact footprint. The device supports continuous drain current up to 12 A and a maximum drain-source voltage of 80 V while dissipating up to 18 W.
The 8-Pin WDFN surface mount package measures 3.15 mm by 3.15 mm and features wettable flanks which enable enhanced optical inspection during manufacturing. This MOSFET is AEC-Q101 qualified meeting automotive standards for robustness and reliability.
Key technical strengths include a low maximum drain-source resistance of 55 milliohms, ensuring minimal conduction losses, and a typical gate charge of 4.7 nC at gate-source voltage of 4.7 V allowing for reduced switching losses. It has a high maximum gate-source voltage tolerance of 20 V and wide operating temperature range from -55°C to 175°C.
This packaging and robust performance make the NVTFS6H888NTAG ideal for applications such as reverse battery protection, power switching (high and low side driver circuits, H-bridges), switching power supplies, solenoid drivers in ABS and fuel injection systems, and motor controls including EPS, wipers, fans, and seats.
Its compact size and enhanced optical inspection support also facilitate high-volume manufacturing in automotive electronic control units (ECUs), chassis, and body systems. Low on-resistance reduces conduction losses. Automotive standard AEC-Q101 certification for reliability.
Compact 3.15 mm x 3.15 mm WDFN package. Wettable flank option for efficient manufacturing inspection. High power dissipation capability of 18 W. Wide operating temperature range improves durability. Versatile automotive applications including battery protection and motor control.
This product is manufactured in Malaysia and is supplied new in compliance with automotive industry quality standards. Explore additional Power MOSFETs and semiconductor components on EnvMart for industrial and automotive electronics requirements.
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