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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 950μm |
| Length | 5.9mm |
| Model | NVMFSC1D6N06CL |
| Width | 5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 224A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 166W |
| Typical Gate Charge Qg @ Vgs | 91nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
onsemi NVMFSC1D6N06CL is a high-performance N-Channel Power MOSFET designed for automotive and industrial applications requiring efficient power switching and thermal management. This enhancement mode MOSFET supports a continuous drain current of up to 224 A and withstands a drain-source voltage of 60 V, making it suitable for high current switching operations.
Housed in a compact 8-pin PQFN surface mount package with dimensions of 5.9 mm (length) by 5 mm (width) and a height of 950 μm, this device supports space-efficient PCB designs. The wettable flank option enables enhanced optical inspection during manufacturing, ensuring quality and reliability.
With a low drain-source resistance (Rds(on)) of 2.3 milliohms, the MOSFET minimizes conduction losses, improving overall system efficiency. The typical gate charge of 91 nC reduces gate drive losses, which optimizes switching performance and energy consumption. The maximum power dissipation rating of 166 W, combined with an operating temperature range from -55°C to 150°C, ensures robust performance in demanding environments.
This device conforms to the AEC-Q101 automotive standard, making it highly suitable for use in automotive power switches such as high side drivers, low side drivers, H-bridge circuits, reverse battery protection, and switching power supplies.
Compact footprint for efficient PCB layout. High continuous drain current of 224 A supports high power applications. Low on-resistance reduces power loss. Wide operating temperature range ensures reliability under harsh conditions.
Automotive-grade quality with AEC-Q101 qualification. Surface mount PQFN package for automated assembly. Wettable flanks enable enhanced inspection during production. Low gate charge for reduced switching losses. Ideal for power switching in automotive and industrial sectors.
Robust thermal management with high power dissipation capacity. This MOSFET is an ideal choice for applications requiring efficient, compact, and reliable power switching solutions in the automotive, industrial, and power management domains.
Explore more automotive-grade semiconductors and power MOSFETs at EnvMart for your next high-performance electronic design.
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