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onsemi Silicon Carbide (SiC) Schottky Diode 650 V 11 A Through Hole TO-220 Package FFSP1065B
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | FFSP1065B |
| Width | 2.92mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 11A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 160μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A |
| Maximum Forward Voltage Vf | 2.4V |
Key Features
- Operates at a maximum junction temperature of 175°C for high reliability.
- Through hole mount type ensuring robust mechanical connection.
- Features a low forward voltage of 2.4 V and peak reverse repetitive voltage of 650 V.
- Designed with a single diode configuration and 2-pin TO-220 package.
- Suitable for general purpose industrial applications including power switching circuits and solar inverters.
- Wide operating temperature range from -55°C to +175°C.
- High surge current capability of 650 A peak non-repetitive forward surge current.
- RoHS compliant silicon carbide technology ensures reduced EMI and enhanced switching efficiency.
Product Description
onsemi FFSP1065B is a Silicon Carbide (SiC) Schottky Diode designed for superior switching performance and reliability compared to traditional silicon diodes. It offers a maximum continuous forward current of 11 A and withstands peak reverse repetitive voltages up to 650 V. The device is housed in a TO-220 package and employs a single diode configuration with 2 pins for through-hole mounting.
The silicon carbide semiconductor enables zero reverse recovery current, temperature independent switching characteristics, and excellent thermal performance. These features make the FFSP1065B ideal for industrial applications such as power switching circuits, solar inverters, UPS systems, and general-purpose electronics requiring efficient power rectification with reduced EMI and system size.
The diode operates reliably over a wide temperature range from -55°C to 175°C and is RoHS compliant, providing an environmentally friendly solution. It has a low forward voltage drop of 2.4 V to ensure efficiency and supports high surge current capacity with a peak non-repetitive forward surge current of 650 A. Its robust construction includes lead-free and halogen-free materials, aligning with modern industry standards.
Operates at a maximum junction temperature of 175°C for high reliability. Through hole mount type ensuring robust mechanical connection. Features a low forward voltage of 2.4 V and peak reverse repetitive voltage of 650 V.
Designed with a single diode configuration and 2-pin TO-220 package. Suitable for general purpose industrial applications including power switching circuits and solar inverters. Wide operating temperature range from -55°C to +175°C.
High surge current capability of 650 A peak non-repetitive forward surge current. RoHS compliant silicon carbide technology ensures reduced EMI and enhanced switching efficiency. Manufactured in China with lead-free, halogen-free construction.
This component is an excellent choice for industrial, commercial, and automotive electronics requiring efficient, high-power rectification with excellent thermal and switching performance. onsemi's FFSP1065B provides durability, efficiency, and compliance with modern electronic industry standards.
Explore more high-quality semiconductor diodes and related components through EnvMart's extensive catalog for reliable sourcing and support.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current of this model is 11 A.
This unit operates over a wide temperature range from -55°C to 175°C.
The diode features a low forward voltage drop of 2.4 V.
It is housed in a TO-220 package with a through-hole mount type.
This model can handle a peak non-repetitive forward surge current of 650 A.
The diode is designed with a 2-pin configuration.
Yes, this unit is RoHS compliant, ensuring it meets environmental standards.
The dimensions of this model are 16.51 mm in height, 10.67 mm in length, and 2.92 mm in width.
It utilizes silicon carbide (SiC) technology, which enhances switching efficiency and reduces EMI.
The FFSP1065B is manufactured in China.
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