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onsemi N-Channel MOSFET, 44 A, 80 V Enhancement Mode, 8-Pin WDFN Package NVTFS6H854N

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onsemi N-Channel MOSFET, 44 A, 80 V Enhancement Mode, 8-Pin WDFN Package NVTFS6H854N

Name: onsemi N-Channel MOSFET, 44 A, 80 V Enhancement Mode, 8-Pin WDFN Package NVTFS6H854N
Brand: onsemi
SKU: 157218

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	Malaysia
Brand	onsemi
Height	750μm
Length	3.15mm
Model	NVTFS6H854N
Width	3.15mm
Mount Type	Surface
Series	NVTFS6H854N
Maximum Operating Temperature	175°C
Package Type	WDFN
Minimum Operating Temperature	-55°C
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	44A
Maximum Drain Source Voltage Vds	80V
Maximum Drain Source Resistance Rds	14.5mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	68W
Typical Gate Charge Qg @ Vgs	13nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Features a compact 3.15 mm x 3.15 mm 8-pin WDFN surface mount package.
Operates with a maximum continuous drain current of 44 amperes.
Maximum drain-source voltage of 80 volts suitable for automotive electronics.
Low on-resistance of 14.5 milliohms to minimize conduction losses.
Supports a maximum power dissipation of 68 watts ensuring robust thermal handling.
Wide operating temperature range from -55°C to 175°C for harsh environments.
Typical gate charge of 13 nanocoulombs allowing efficient switching performance.
Compliant with AEC-Q101 automotive standard for reliability.

Product Description

The onsemi NVTFS6H854N is a high-performance N-Channel MOSFET optimized for automotive and industrial applications. Featuring an 8-pin WDFN surface mount package measuring 3.15 mm by 3.15 mm, this device delivers excellent electrical performance with a maximum continuous drain current of 44 A and a maximum drain-source voltage of 80 V.

This MOSFET operates in enhancement mode and provides a low on-resistance of 14.5 milliohms, which helps reduce conduction losses and improves overall system efficiency. It supports a maximum power dissipation of 68 W with reliable thermal performance, suitable for demanding environments.

The device is rated to operate in a wide temperature range from -55°C up to 175°C, making it suitable for automotive and other harsh environmental conditions. The typical gate charge at Vgs is 13 nC, which enables efficient switching with reduced power loss.

Additional features include a wettable flank option that enhances optical inspection processes during manufacturing, aligning with modern quality standards. The package design supports compact and space-saving PCB layouts, ideal for applications like motor control, load switching, and power management in vehicles and industrial equipment.

Certified to the AEC-Q101 automotive standard, this MOSFET ensures high reliability in automotive systems such as ABS solenoids, fuel injection, EPS, wipers, and HVAC fan controls. Its robust design and performance characteristics make it an excellent choice for engineers seeking durable and efficient power MOSFET solutions.

Compact 3.15 mm x 3.15 mm 8-Pin WDFN surface mount package. Maximum continuous drain current of 44 A. Rated for 80 V drain-source voltage. Low on-resistance of 14.5 mΩ minimizing conduction losses. Power dissipation capability up to 68 W.

Operating temperature range from -55°C to 175°C. Typical gate charge of 13 nC ensures efficient switching. AEC-Q101 qualified for automotive-grade reliability. Wettable flank option available for enhanced manufacturing inspection.

Product of Malaysia, utilizing advanced surface mount technology.

Explore EnvMart’s extensive catalog of onsemi semiconductor components for automotive, industrial, and consumer electronics applications to find suitable parts for your design and manufacturing needs.