onsemi N-Channel MOSFET, 30A, 650V Enhancement Mode, 3-Pin TO-220 NTP095N65S3H

The onsemi NTP095N65S3H is an N-Channel enhancement mode MOSFET featuring a maximum continuous drain current of 30 Amperes and a drain-source voltage rating of 650 Volts housed in a 3-pin TO-220 package. It employs advanced super-junction technology to deliver low on-resistance and reduced gate charge, enabling high efficiency and low conduction losses in power management circuits.

This MOSFET is rated for a maximum power dissipation of 208 Watts, supporting demanding thermal conditions with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C, making it suitable for a wide range of industrial, electronic, and automotive power switching applications. Its typical gate charge of 58nC at Vgs of 10V ensures rapid switching performance and reduced switching losses.

Physical package dimensions measure 10.67mm in length, 4.7mm in width, and 16.3mm in height, facilitating easy mounting through the PCB holes with a standard through-hole TO-220 mount. The device has a maximum drain-source resistance of 95 milliohms, enhancing efficiency in conduction mode and reducing power dissipation.

Key features include its robust maximum gate-source voltage rating of ±30V, a typical forward voltage of 1.2V, and avalanche testing for reliability. This MOSFET is ideal for applications in industrial power supplies, motor control, power inverters, and other electronic control systems where efficient switching and thermal management are critical.

The onsemi NTP095N65S3H offers ultra-low gate charge and low effective output capacitance for improved switching capabilities. It is 100% avalanche tested to ensure robustness under transient conditions. Designed with charge balance technology to minimize conduction losses and enhance energy efficiency.

The device supports a maximum drain current of 30A enabling high current applications. Wide operating temperature range from -55°C to 175°C for reliable performance in harsh environments. Standard TO-220 package for easy integration into existing hardware designs.

Typical forward voltage drop of 1.2V reduces power loss during operation. Maximum power dissipation capacity of 208W supports high power electronic circuits.

This MOSFET is widely suitable for industrial equipment, automotive electronics, HVAC systems, and manufacturing machinery where reliable, high-performance power switching devices are required. The product supports designers and engineers with its superior thermal handling, switching speed, and electrical parameters.

Explore more power transistor solutions in the MOSFET category on EnvMart for efficient energy management and control in professional electronics applications.