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Infineon HEXFET N-Channel MOSFET 600 mA 200 V Enhancement Mode, 6-Pin TSOP IRF5801TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 900μm |
| Length | 3mm |
| Model | IRF5801TRPBF |
| Width | 1.5mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 600mA |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 2.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 3.9nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRF5801TR 0.60A 200VBrand | International Rectifier |
Key Features
- Rated for a maximum continuous drain current of 600 mA.
- Maximum drain-source voltage of 200 V for robust power handling.
- Low drain-source resistance of 2.2 Ohms reduces conduction losses.
- Package type is 6-pin TSOP designed for surface mount technology.
- Typical gate charge of 3.9 nC at gate-source voltage enhances switching efficiency.
- Wide operating temperature range from -55°C to 150°C ensures durability.
- Maximum power dissipation rated at 2 Watts to handle thermal loads.
- Forward voltage drop typically 1.3 V for low voltage drop applications.
Product Description
Infineon IRF5801TRPBF is a HEXFET N-Channel MOSFET designed for power electronic applications requiring efficient switching at currents up to 600 mA and voltages up to 200 V. Housed in a compact 6-pin TSOP surface mount package, this enhancement-mode MOSFET offers low on-resistance of 2.2 Ohms helping to reduce conduction losses and improve overall system efficiency.
The device operates reliably across a wide temperature range from -55°C to 150°C, with maximum power dissipation of 2 Watts, making it suitable for industrial, automotive, and consumer electronics applications. Its typical gate charge of 3.9 nC at Vgs and a maximum gate voltage rating of ±30 V provide enhanced switching performance and protection.
This MOSFET is ideal for use in DC - DC converters, motor drives, switching power supplies, and other low-power switching circuits. The 6-pin TSOP package ensures ease of installation on surface mount PCBs while maintaining good thermal performance.
Maximum continuous drain current of 600 mA offers moderate power capability. Drain-source voltage rating of 200 V supports a range of power applications. Low Rds(on) of 2.2 Ohms minimizes power losses. Compact 6-pin TSOP surface mount package suits automated assembly processes.
Wide operating temperature from -55°C to 150°C supports harsh environments. Power dissipation of 2 W enables stable operation under load. Gate charge and voltage limits protect gate control and switching speed.
Infineon’s HEXFET technology enables optimal power efficiency and reliability in a compact footprint. This device complies with RoHS standards and is suitable for industrial, automotive, consumer electronics, and instrumentation uses.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon HEXFET N-Channel MOSFET is 600 mA.
This model has a maximum drain-source voltage rating of 200 V.
The low drain-source resistance (Rds(on)) of this MOSFET is 2.2 Ohms, which helps reduce conduction losses.
The typical gate charge at gate-source voltage (Vgs) is 3.9 nC, enhancing switching efficiency.
It is housed in a compact 6-pin TSOP package designed for surface mount technology.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The maximum power dissipation is rated at 2 Watts, allowing it to handle thermal loads effectively.
This model is suitable for applications such as DC-DC converters, motor drives, and switching power supplies.
The dimensions of this model are 3 mm in length, 1.5 mm in width, and 900 μm in height.
The forward voltage drop is typically 1.3 V, making it suitable for low voltage drop applications.
The maximum gate-source voltage rating for this device is ±30 V.
The country of origin for this MOSFET is India.
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