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Vishay TrenchFET Type N-Channel MOSFET 65 A 100 V Enhancement 8-Pin SO-8 SIR668DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SIR668DP-T1-RE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 65A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 5.05mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- High maximum power dissipation of 104 W supports robust operation.
- Low maximum drain-source resistance of 5.05 milliohms enhances efficiency.
- Operational temperature range from -55°C to 150°C enables use in harsh environments.
- Contains 8 pins in standard SO-8 surface mount package for easy PCB integration.
- Typical gate charge of 72 nC at 10 V gate-source voltage allows fast switching.
- Maximum gate-source voltage rated at 20 V ensures reliable gate control.
- Forward voltage of 1.1 V optimizes conduction losses.
- TrenchFET Gen IV technology provides improved performance and reduced on-resistance.
Product Description
Vishay SIR668DP-T1-RE3 is a high-performance TrenchFET Type N-Channel MOSFET designed for power switching applications requiring robust current handling and low on-resistance. Featuring a maximum continuous drain current of 65 A and a maximum drain-source voltage rating of 100 V, this MOSFET is suitable for industrial, automotive, and consumer electronics applications.
The device comes in an 8-pin SO-8 surface mount package, facilitating compact PCB layouts. It supports a maximum power dissipation of 104 W, making it ideal for high-power switching and amplification tasks. Its low maximum drain-source resistance of 5.05 milliohms (mΩ) helps to minimize conduction losses and improve overall efficiency in power electronics circuits.
Operational temperature ranges from -55°C to 150°C, enabling reliable performance in extreme environments. Typical gate charge at 10 V gate-source voltage is 72 nC, allowing for fast and efficient switching. The maximum gate-source voltage rating of 20 V protects the gate during sudden voltage spikes. Forward voltage of 1.1 V supports optimized conduction characteristics.
This MOSFET employs Vishay's Gen IV TrenchFET technology, which enhances switching speed and performance while reducing on-resistance, making it suitable for demanding industrial, laboratory, automotive, and commercial electronics uses.
High maximum power dissipation of 104 W supports robust operation. Low maximum drain-source resistance of 5.05 milliohms enhances efficiency. Operational temperature range from -55°C to 150°C enables use in harsh environments.
Contains 8 pins in standard SO-8 surface mount package for easy PCB integration. Typical gate charge of 72 nC at 10 V gate-source voltage allows fast switching. Maximum gate-source voltage rated at 20 V ensures reliable gate control.
Forward voltage of 1.1 V optimizes conduction losses. TrenchFET Gen IV technology provides improved performance and reduced on-resistance. Discover Vishay's range of semiconductor components on EnvMart, your trusted platform for high-quality electronic components.
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Frequently Asked Questions
The maximum continuous drain current for the SIR668DP-T1-RE3 is 65 A.
This model has a maximum drain-source voltage rating of 100 V.
It supports a maximum power dissipation of 104 W, making it suitable for high-power applications.
The operational temperature range is from -55°C to 150°C, allowing for use in harsh environments.
The maximum gate-source voltage rated for this model is 20 V.
The typical gate charge at 10 V gate-source voltage is 72 nC.
The maximum drain-source resistance is 5.05 milliohms (mΩ), enhancing efficiency in power circuits.
It comes in an 8-pin SO-8 surface mount package, which facilitates easy PCB integration.
The dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
This model uses a Type N channel configuration.
It employs Vishay's Gen IV TrenchFET technology, which improves performance and reduces on-resistance.
The SIR668DP-T1-RE3 is manufactured in India.
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