Vishay Siliconix Dual TrenchFET 2 N-Channel Power MOSFET 30 A 30 V Enhancement 8-Pin PowerPAIR 3x3 SiZ350DT-T1-GE3

Vishay Siliconix SiZ350DT-T1-GE3 is a high-performance Dual TrenchFET 2 N-Channel Power MOSFET designed for efficient power management in industrial and electronic applications. It supports a maximum drain current of 30 A and a drain-source voltage rating of 30 V, making it suitable for demanding load environments.

The device is built using TrenchFET® Gen IV technology, offering optimized RDS(on) and gate charge characteristics to enhance switching efficiency and thermal performance. Its dual transistor configuration enables optimized high side and low side MOSFET integration for synchronous buck converters and half-bridge circuits operating at 50% duty cycle.

This MOSFET features an 8-pin PowerPAIR 3 x 3 mm surface mount package that facilitates compact board layouts and ease of thermal management. Package dimensions include a length and width of 3 mm each, and a height of 0.75 mm. The packaging supports standard surface-mount assembly processes.

Thermal and electrical robustness are guaranteed by a maximum power dissipation of 16.7 W and a wide operating temperature range from -55°C to +150°C. The device's low typical gate charge of 12.1 nC at Vgs improves high-frequency switching performance, reducing power loss and increasing efficiency.

Applications include DC/DC synchronous buck converters, half-bridge topologies, and power management circuitry in automotive, industrial, and general electronics sectors requiring compact, efficient, and reliable MOSFET solutions.

Features an enhancement mode N-channel trench MOSFET construction. Maximum continuous drain current of 30 A supports high load handling capability. Maximum drain-source voltage of 30 V ensures reliable operation at moderate voltage levels.

Low RDS(on) of 9 milliohms reduces conduction losses and improves thermal management. Package designed as PowerPAIR 3 x 3 mm with 8 pins for compact footprint and better heat dissipation. Maximum power dissipation of 16.7 W for durable operation under heavy load.

Operating temperature range from -55 to +150°C accommodates harsh environmental conditions. Typical gate charge of 12.1 nC enables fast switching and minimal gate drive losses. Dual transistor configuration allows efficient power stage layouts in synchronous designs.

Ideal for synchronous buck DC/DC converters, half-bridge power stages, and power management circuits.

The Vishay Siliconix SiZ350DT-T1-GE3 provides a reliable and efficient solution for compact power electronics, contributing to longer service life and enhanced overall system efficiency.

Explore more Vishay Siliconix semiconductors and Power MOSFET components in the EnvMart electronics category for tailored application solutions.