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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NVMFS5C670NL |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NVMFS5C670NL |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 71A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 61W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
onsemi NVMFS5C670NL is a high-performance N-Channel MOSFET rated for a continuous drain current of 71 A and a maximum drain-source voltage of 60 V. Packaged in a low-profile 5-pin DFN surface mount device, it is engineered for compact and efficient designs targeting automotive, industrial, and power management applications.
This enhancement mode MOSFET features a low drain-source resistance (RDS(on)) of 8.8 milliohms, which minimizes conduction losses and enhances energy efficiency. The typical gate charge of 20 nC further reduces switching losses, making it excellent for high-frequency power switching.
The device supports a maximum power dissipation of 61 W and can operate reliably over a wide temperature range from -55°C to 175°C, ensuring robust performance in harsh environments. Its compact dimensions (6.1 mm length, 5.1 mm width, and 1.05 mm height) make it suitable for space-constrained PCB layouts.
Designed specifically for automotive applications, the NVMFS5C670NL complies with the AEC-Q101 standard and offers PPAP capability. Typical use cases include switching power supplies, DC motor control, load switching in electronic control units (ECUs), solenoid drivers for ABS and fuel injection, and high-side/low-side drivers in H-bridge circuits.
The surface mount DFN package supports high thermal performance and ease of assembly with wettable flanks for enhanced optical inspection during manufacturing. This combination of features delivers a best-in-class figure of merit (FOM) characterized by RDS(on) times gate charge, resulting in improved system efficiency and lower total power dissipation.
Enhancement mode N-Channel MOSFET with 71 A continuous drain current. Rated for 60 V maximum drain-source voltage. Low RDS(on) of 8.8 mΩ reduces conduction losses. Typical gate charge 20 nC minimizes switching losses. Power dissipation capacity of 61 W.
Operating temperature range: -55°C to 175°C. Compact 5-pin DFN package (6.1 mm x 5.1 mm x 1.05 mm). Meets automotive standard AEC-Q101 for automotive and industrial robustness.
This onsemi Power MOSFET is a reliable solution for industrial, automotive, and consumer electronics requiring efficient power switching and thermal management. It is widely used in motor controls, power supplies, chassis load switches, and other high current switching applications. Explore the comprehensive onsemi MOSFET range and power your designs with advanced semiconductor devices available on EnvMart.
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