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Nexperia Dual N-Channel MOSFET 18.2A 40V LFPAK56D 8-Pin BUK9K25-40RAX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | BUK9K25-40RAX |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK56D |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 18.2A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 29mΩ |
| Maximum Power Dissipation Pd | 32W |
| Typical Gate Charge Qg @ Vgs | 6.3nC |
| Maximum Gate Source Voltage Vgs | -15V |
Key Features
- This MOSFET features dual N-channel operation, optimized for high reliability.
- The device supports a maximum continuous drain current of 18.2A for robust power handling.
- Operating voltage up to 40V enables use in demanding electronics applications.
- LFPAK56D surface mount package provides efficient thermal performance and ease of automated assembly.
- Gull wing leads ensure strong manufacturability for circuit integration.
- Ideal for repetitive avalanche applications, tested to AEC-Q101 automotive standard at 175°C.
- Eight-pin configuration enhances circuit design flexibility.
- RoHS-compliant construction suits environmentally sensitive projects.
Product Description
Nexperia delivers the BUK9K25-40RAX, a dual N-channel MOSFET engineered for demanding applications requiring reliable, high current switching. This LFPAK56D surface-mount device operates with a maximum drain current of 18.2A and drain-source voltage of 40V, making it ideal for power electronics, automotive, and industrial circuits.
This device utilizes logic-level N-channel configuration to provide high efficiency and low switching losses for power conversion and voltage regulation tasks. The LFPAK copper clip technology ensures robust thermal characteristics and allows for efficient heat dissipation.
With gull wing leads and eight-pin configuration, this MOSFET simplifies manufacturing and affords broad compatibility with automated circuit assembly systems. BUK9K25-40RAX is fully qualified to AEC-Q101 for automotive applications and supports repetitive avalanche events with excellent robustness.
Its typical gate charge is 6.3nC at Vgs, and drain-source resistance is 29mΩ maximum, offering fast switching and minimal power loss. The device operates reliably across an extended temperature range from -55°C to 175°C, supporting use in harsh environments and mission-critical industrial settings.
RoHS compliance assures suitability in regulations-driven projects and products. Its dual-element per chip configuration provides flexibility for multi-path circuit integration.
Recommended for industrial power management, automotive electronic control units, motor drivers, and advanced inverter designs. Suitable for manufacturing, energy, laboratory instrumentation, and commercial electronics requiring compact high-current FETs.
Explore more MOSFETs and Nexperia semiconductor solutions in the EnvMart electronics catalog.
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Frequently Asked Questions
The maximum continuous drain current for the BUK9K25-40RAX is 18.2A.
This model supports a maximum drain-source voltage of 40V.
The typical gate charge for the BUK9K25-40RAX is 6.3nC at Vgs.
The maximum drain-source resistance for this device is 29mΩ.
The operating temperature range for this MOSFET is from -55°C to 175°C.
This MOSFET uses an LFPAK56D surface mount package.
The BUK9K25-40RAX has an 8-pin configuration.
Yes, it is RoHS compliant, making it suitable for environmentally sensitive projects.
The maximum power dissipation for this model is 32W.
It is recommended for industrial power management, automotive electronic control units, motor drivers, and advanced inverter designs.
This MOSFET features a dual N-channel configuration.
The gull wing leads ensure strong manufacturability for circuit integration and facilitate automated assembly.
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