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onsemi N-Channel MOSFET 316 A 40 V Enhancement Mode Surface Mount 8-Pin DFN Package NVMFSC0D9N04CL
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 950μm |
| Length | 5.9mm |
| Model | NVMFSC0D9N04CL |
| Width | 5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 316A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 166W |
| Typical Gate Charge Qg @ Vgs | 86nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for compact and efficient automotive and industrial applications.
- Offers low on-state resistance of 1.3 milliohms to minimize conduction losses.
- Features a maximum continuous drain current of 316 A for high power handling.
- Supports a maximum power dissipation of 166 W and operates up to 175°C.
- Includes wettable flank option for enhanced optical inspection and PPAP capability for automotive standards compliance.
- Small 5.9 mm x 5 mm footprint with low typical gate charge of 86 nC for efficient switching.
- Reliable operation down to -55°C minimum and up to 175°C maximum temperature range.
- Ideal for battery protection, switching power supplies, and high- and low-side driver switching applications.
Product Description
onsemi NVMFSC0D9N04CL is a high-current N-Channel power MOSFET designed for automotive and industrial electronic applications including battery protection, power supplies, and power switches.
This device is built in an 8-pin DFN surface mount package measuring 5.9 mm by 5 mm with a low profile height of 950 μm, making it suitable for compact PCB layouts requiring high thermal performance.
The MOSFET offers a maximum continuous drain current of 316 A at a low drain-source resistance of 1.3 milliohms, reducing conduction losses and improving efficiency in high power circuits. It supports a maximum drain-source voltage of 40 V and can dissipate up to 166 W of power while operating within a wide thermal range from -55°C to 175°C.
This enhancement mode MOSFET features a typical gate charge of 86 nC and a maximum gate-source voltage of 20 V, enabling efficient and fast switching in power conversion and motor control applications. The device also has a forward voltage of 1.2 V and complies with the AEC-Q101 automotive standard, ensuring high reliability under harsh conditions.
Compact 8-pin DFN surface mount package with dimensions 5.9 mm x 5 mm x 0.95 mm. 316 amp maximum continuous drain current at 40 V maximum voltage rating. Low on-state resistance of 1.3 milliohms to minimize power losses.
Wide operating temperature range from -55°C to 175°C for automotive environments. Wettable flank option available for improved optical inspection. PPAP capable, meeting automotive production part approval process. Applications include automotive battery protection, switching power supplies, and power switches such as H-bridges.
Reliable onsemi power MOSFETs like the NVMFSC0D9N04CL are preferred for demanding industrial and automotive use cases that require high current capability, low thermal resistance, and compact package forms.
Explore the comprehensive range of semiconductor products from onsemi and other leading manufacturers at EnvMart to source quality Power MOSFETs, discrete semiconductors, and electronic components for your designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 316 A.
This MOSFET operates within a temperature range of -55°C to 175°C.
The on-state resistance is 1.3 milliohms, which helps minimize conduction losses.
It comes in an 8-pin DFN package with dimensions of 5.9 mm x 5 mm and a height of 950 μm.
The maximum power dissipation for this MOSFET is 166 W.
The typical gate charge is 86 nC, facilitating efficient switching.
Yes, it complies with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.
The maximum gate-source voltage is 20 V.
This model is suitable for applications such as battery protection, switching power supplies, and power switches like H-bridges.
The forward voltage is 1.2 V.
The channel type is N-channel, which is suitable for various electronic applications.
The minimum operating temperature is -55°C, allowing for reliable performance in extreme conditions.
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