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Infineon HEXFET N-Channel MOSFET 44 A 150 V Enhancement Mode 8-Pin PQFN IRFH5015TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 850μm |
| Length | 6mm |
| Model | IRFH5015TRPBF |
| Width | 5mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 44A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 31mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports a maximum continuous drain current of 44 amperes.
- Maximum drain-source voltage rating of 150 volts for robust performance.
- Low on-state resistance of 31 milliohms ensures efficient conduction.
- Surface mount package type in PQFN form factor with 8 pins.
- Designed for enhancement mode operation with typical gate charge of 36 nanocoulombs.
- Maximum power dissipation capacity of 156 watts for high-power applications.
- Wide operating temperature range from -55°C to 150°C for reliability.
- Forward voltage drop of 1.3 volts minimizes losses during switching.
Product Description
Infineon IRFH5015TRPBF is a HEXFET N-Channel Power MOSFET designed for high efficiency and reliability in power switching applications. This MOSFET is rated for a maximum continuous drain current of 44 A and a drain-source voltage of 150 V, making it suitable for demanding industrial, automotive, and electronic systems.
Encapsulated in an 8-pin PQFN surface mount package, the device combines low conduction losses with excellent thermal performance, supporting a power dissipation up to 156 W. The enhancement mode channel and low on-resistance of 31 milliohms significantly reduce power loss, enhancing overall system efficiency.
The device operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for harsh environments. The gate charge specification of 36 nC allows fast switching speeds, and the gate-source voltage tolerates ±20 V, providing robust control margins.
Typical applications for the IRFH5015TRPBF include power management circuits, DC-DC converters, motor drivers, and load switches in industrial automation, HVAC systems, automotive electronics, and consumer electronic devices requiring high current and voltage ratings.
The compact 6 mm by 5 mm footprint with a height of only 850 micrometers allows for space-saving PCB layouts optimized for thermal management. Infineon's HEXFET technology ensures optimized conduction and switching efficiencies to meet modern power design needs.
Supports a maximum continuous drain current of 44 amperes. Maximum drain-source voltage rating of 150 volts for robust performance. Low on-state resistance of 31 milliohms ensures efficient conduction. Surface mount package type in PQFN form factor with 8 pins.
Designed for enhancement mode operation with typical gate charge of 36 nanocoulombs. Maximum power dissipation capacity of 156 watts for high-power applications. Wide operating temperature range from -55°C to 150°C for reliability.
Forward voltage drop of 1.3 volts minimizes losses during switching. Gate-source voltage max range from -20 V to +20 V for flexible control. Compact dimensions: Length 6 mm, Width 5 mm, Height 850 micrometers.
Choose Infineon HEXFET MOSFETs for reliable power switching and high efficiency in industrial, automotive, and consumer electronic designs. Explore EnvMart's comprehensive catalog for related semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 44 amperes.
It has a maximum drain-source voltage rating of 150 volts.
The on-state resistance is 31 milliohms, which ensures efficient conduction.
This MOSFET comes in an 8-pin PQFN surface mount package type.
The typical gate charge is 36 nanocoulombs.
The maximum power dissipation capacity is 156 watts, suitable for high-power applications.
It operates reliably across a wide temperature range from -55°C to 150°C.
The forward voltage drop is 1.3 volts, which minimizes losses during switching.
The dimensions are 6 mm in length, 5 mm in width, and 850 micrometers in height.
The maximum gate-source voltage tolerates -20 V to +20 V, providing flexible control margins.
It is suitable for applications such as power management circuits, DC-DC converters, motor drivers, and load switches in various systems.
This model utilizes an N-channel type for enhancement mode operation.
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