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Infineon HEXFET N-Channel MOSFET 100 V 290 A 3-Pin TO-247 IRFP4468PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP4468PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 290A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 520W |
| Typical Gate Charge Qg @ Vgs | 360nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- HEXFET technology provides high performance and reliability.
- Operational temperature range from -55°C to 175°C for robust applications.
- Maximum power dissipation of 520 W enables high-power usage scenarios.
- Low maximum drain-source resistance of 3 milliohms reduces conduction losses.
- Typical gate charge of 360 nC supports fast switching.
- Enhancement mode channel type operation ensures efficient control.
- TO-247 through-hole mounting offers easy integration into boards.
- Suitable for motor control and synchronous rectification applications.
Product Description
Infineon IRFP4468PBF is a HEXFET N-Channel MOSFET designed for high current and low voltage applications. It supports a continuous drain current of 290 A and a maximum drain-source voltage of 100 V, housed in a 3-pin TO-247 through-hole package. This MOSFET operates in enhancement mode and features a low on-resistance of 3 milliohms, contributing to efficient power handling.
With a maximum power dissipation rating of 520 W and operational temperature ranging from -55°C to 175°C, this device is suitable for industrial, motor control, and AC-DC synchronous rectifier applications where reliability and performance are critical.
The typical gate charge of 360 nC enables fast switching capabilities, making it ideal for power switching designs in electronic components, power supplies, and semiconductor circuits. The package dimensions are 15.87 mm in length, 20.7 mm in height, and 5.31 mm in width, facilitating board-level mounting and heat dissipation.
Though not designed with automotive standards or approvals, this MOSFET's robust characteristics make it a solid choice for a wide range of power electronics implementations. HEXFET technology for high-efficiency switching.
High continuous drain current of 290 A supports demanding loads. Low Rds(on) reduces heat generation and improves efficiency. Wide temperature operating range enhances application versatility. Through-hole TO-247 package allows easy thermal management.
Ideal for motor control and synchronous rectification circuits. Manufactured in China under Infineon quality standards. Explore more MOSFETs and semiconductor products on EnvMart for advanced electronic design solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 290 A.
It has a maximum drain-source voltage of 100 V.
This model operates within a temperature range of -55°C to 175°C.
The IRFP4468PBF is housed in a TO-247 package type.
The typical gate charge is 360 nC at Vgs.
The maximum drain-source resistance is 3 milliohms, which reduces conduction losses and improves efficiency.
The dimensions are 15.87 mm in length, 20.7 mm in height, and 5.31 mm in width.
This model is suitable for motor control and synchronous rectification applications.
The maximum power dissipation is rated at 520 W.
It uses an enhancement mode N-channel type operation.
The maximum gate-source voltage is -20V to +20V.
This MOSFET is manufactured in China under Infineon quality standards.
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