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Infineon HEXFET N-Channel MOSFET TO-220, 36 A Continuous Drain Current, 100 V Drain Source Voltage, Enhancement IRF540ZPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF540ZPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 27mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 92W |
| Typical Gate Charge Qg @ Vgs | 42nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Utilizes HEXFET technology for enhanced efficiency and fast switching.
- Maximum continuous drain current of 36 amperes supports high power applications.
- Drain-source voltage rated at 100 volts ensuring reliability under varying voltage conditions.
- Low Rds(on) of 27 milliohms minimizes power loss in conduction.
- Enhancement mode operation provides reliable switching performance.
- Maximum power dissipation of 92 watts enables use in demanding industrial and automotive environments.
- Operates reliably in high-temperature conditions up to 175°C.
- Through-hole mount type with TO-220 package facilitates effective heat dissipation.
Product Description
Infineon IRF540ZPBF HEXFET N-Channel MOSFET in TO-220 package offers a maximum continuous drain current of 36 A and a maximum drain-source voltage of 100 V. Featuring enhancement mode operation and low on-resistance, it is suited for high-efficiency power management and motor control applications.
This HEXFET device leverages advanced technology to provide fast switching speeds and low conduction losses, making it ideal for industrial automation, automotive electronics, and power supplies. Its 3-pin through-hole design ensures reliable mounting and excellent thermal performance.
Designed for demanding environments, it can withstand operating temperatures up to 175°C and can handle a maximum power dissipation of 92 W. The low Rds(on) of 27 mΩ further enhances thermal efficiency and system performance.
Applications include motor control, switching power supplies, converters, and automotive systems requiring robust, efficient power semiconductors. Utilizes HEXFET technology for enhanced efficiency and fast switching. Maximum continuous drain current of 36 amperes supports high power applications.
Drain-source voltage rated at 100 volts ensuring reliability under varying voltage conditions. Low Rds(on) of 27 milliohms minimizes power loss in conduction. Enhancement mode operation provides reliable switching performance.
Maximum power dissipation of 92 watts enables use in demanding industrial and automotive environments. Operates reliably in high-temperature conditions up to 175°C. Through-hole mount type with TO-220 package facilitates effective heat dissipation.
Compact dimensions: Height 8.77 mm, Length 10.54 mm, Width 4.69 mm.
This Infineon MOSFET is an excellent choice for engineers and designers involved in electronic components for industrial, automotive, HVAC, and manufacturing applications. Explore more power semiconductor products and technical details in the semiconductor category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 36 amperes.
This MOSFET has a maximum drain-source voltage rating of 100 volts.
The low Rds(on) for the IRF540ZPBF is 27 milliohms, which minimizes power loss during conduction.
It can handle a maximum power dissipation of 92 watts, making it suitable for demanding applications.
This model operates reliably within a temperature range of -55°C to 175°C.
It features a through-hole mount type with a TO-220 package, facilitating effective heat dissipation.
The typical gate charge (Qg) at Vgs is 42 nanocoulombs.
This MOSFET has a pin count of 3.
It is suitable for applications such as motor control, switching power supplies, converters, and automotive systems.
The enhancement mode operation provides reliable switching performance, which is essential for efficient power management.
The forward voltage (Vf) for the IRF540ZPBF is 1.3 volts.
This model features an N-channel type, which is common for power MOSFETs.
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