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onsemi PNP Transistor 4 A, 350 V, 50 W Power Dissipation, TO-220 Package, 3-Pin MJE15035G

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onsemi PNP Transistor 4 A, 350 V, 50 W Power Dissipation, TO-220 Package, 3-Pin MJE15035G

Name: onsemi PNP Transistor 4 A, 350 V, 50 W Power Dissipation, TO-220 Package, 3-Pin MJE15035G
Brand: onsemi
SKU: 138666

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	30.02mm
Length	10.53mm
Model	MJE15035G
Width	4.83mm
Mount Type	Through Hole
Series	MJE15035
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-350V
Minimum DC Current Gain hFE	10
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	350V
Maximum Power Dissipation Pd	50W
Maximum DC Collector Current Idc	-4A
Transistor Configuration	Single
Maximum Transition Frequency ft	30MHz

Key Features

The transistor supports continuous power dissipation up to 50 W.
Designed with a single transistor configuration and PNP polarity.
It operates within a temperature range from -65°C to 150°C.
Features a maximum transition frequency of 30 MHz suitable for medium-frequency applications.
Has a minimum DC current gain (hFE) of 10 ensuring reliable amplification.
Three-pin configuration supports simple circuit integration.
Maximum collector-base and emitter-base voltages of 350 V and 5 V respectively.
Compact dimensions with 30.02 mm height, 10.53 mm length, and 4.83 mm width.

Product Description

onsemi MJE15035G is a high-performance PNP bipolar junction transistor designed for power switching and amplifier applications. This transistor is housed in a robust TO-220 package with three pins, facilitating reliable through-hole mounting on PCBs for industrial and electronic assemblies.

The device supports a maximum DC collector current of 4 A and can withstand collector-emitter voltages up to 350 V, making it suitable for medium to high voltage power electronics. It can dissipate up to 50 W of power, ensuring efficient heat management under demanding conditions.

Operating reliably over a wide temperature range from -65°C to 150°C, this transistor is adaptable to harsh environments encountered in industrial circuits and power control modules. Its minimum DC current gain of 10 ensures sufficient amplification for switching and signal integrity purposes.

Featuring a maximum transition frequency of 30 MHz, the MJE15035G is ideal for switching applications in power control, motor driving, and amplification where moderate frequency operation is required. The transistor has a PNP configuration with a single transistor setup and is designed for through-hole mounting.

Maximum DC collector current of 4 A. Maximum collector-emitter voltage: 350 V. Power dissipation rating of 50 W. Operating temperature range: -65°C to 150°C. Minimum DC current gain (hFE): 10. Maximum transition frequency: 30 MHz.

3-pin TO-220 package for through-hole mounting. Compact package dimensions: Height 30.02 mm, Length 10.53 mm, Width 4.83 mm.

This transistor is suited for electronic component applications in power supplies, audio amplifiers, motor controllers, and other industrial electronic modules where high voltage and current handling are required. The rugged TO-220 package enhances thermal performance and facilitates easy mounting and heat sinking.

Explore more semiconductor and transistor products in the Bipolar Transistors category at EnvMart for reliable power and switching solutions.