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STMicroelectronics MDmesh N-Channel MOSFET 12 A 500 V Enhancement 3-Pin TO-220 STP12NM50
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP12NM50 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 350mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed for efficient power switching in electronic circuits.
- Features a TO-220 package with through-hole mount for easy integration.
- Offers low drain-source resistance of 350mΩ to reduce conduction losses.
- Supports maximum power dissipation of 160 W for high reliability.
- Operates reliably in temperatures from -65°C up to 150°C.
- Includes a robust MDmesh™ technology for enhanced performance.
- Typical gate charge of 28nC ensures fast switching speeds.
- Maximum gate-source voltage rating of ±30 V allows for safe operation.
Product Description
STMicroelectronics STP12NM50 is a robust MDmesh™ N-Channel MOSFET designed for high current switching applications. Featuring a 12 A maximum continuous drain current and 500 V drain-source voltage, this transistor is suitable for demanding industrial and power management uses.
The enhancement-mode MOSFET comes in a standard 3-pin TO-220 package with through-hole mounting, facilitating easy installation in custom electronic circuits. It boasts a low maximum drain-source resistance of 350mΩ, which improves efficiency by minimizing power loss during operation.
With a high power dissipation rating of 160 W, the STP12NM50 MOSFET supports tough operating conditions, maintaining stable performance between -65°C and 150°C. The typical gate charge of 28nC ensures rapid switching, supporting efficient and responsive control in power electronics.
This device includes forward voltage of 1.5 V and is engineered for reliable operation under gate-source voltages reaching ±30 V. Its compact dimensions (10.4 mm length, 4.6 mm width, 9.15 mm height) enable flexible design integration.
Designed for efficient power switching in electronic circuits. Features a TO-220 package with through-hole mount for easy integration. Offers low drain-source resistance of 350mΩ to reduce conduction losses. Supports maximum power dissipation of 160 W for high reliability.
Operates reliably in temperatures from -65°C up to 150°C. Includes a robust MDmesh™ technology for enhanced performance. Typical gate charge of 28nC ensures fast switching speeds. Maximum gate-source voltage rating of ±30 V allows for safe operation.
Compact dimensions facilitate flexible circuit design. Ideal for power management in industrial, automotive, and consumer electronics applications.
This MOSFET is commonly used in industrial automation, power supplies, and motor control systems where durable and efficient switching is critical. STMicroelectronics' MDmesh™ technology enhances electrical performance, making it a reliable choice for advanced electronics.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
It has a maximum drain-source voltage rating of 500 V.
The typical gate charge is 28 nC, which ensures fast switching speeds.
This model has dimensions of 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
The maximum power dissipation supported by this MOSFET is 160 W.
It operates reliably in temperatures ranging from -65°C to 150°C.
This MOSFET comes in a TO-220 package with through-hole mounting.
The maximum gate-source voltage rating is ±30 V.
It features a low maximum drain-source resistance of 350 mΩ.
The STP12NM50 is an N-channel MOSFET.
It is suitable for industrial automation, power supplies, and motor control systems.
This model includes MDmesh™ technology for improved electrical performance.
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