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STMicroelectronics MDmesh N-Channel MOSFET 20A 600V Enhancement Mode TO-220 Package STP20NM60FP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP20NM60FP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 290mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed with MDmesh technology for enhanced performance and efficiency.
- Features an enhancement mode N-Channel configuration suitable for power applications.
- Maximum continuous drain current of 20 amperes to handle substantial loads.
- Maximum drain-source voltage rating of 600 volts for robust high-voltage switching.
- Comes with a 3-pin TO-220 through-hole mounting package for easy installation.
- Low maximum drain-source resistance of 290 milliohms ensuring minimal conduction losses.
- Capable of dissipating up to 45 watts of power safely during operation.
- Wide operating temperature range from -65°C to 150°C for reliability in harsh environments.
Product Description
STMicroelectronics STP20NM60FP is a high-performance MDmesh N-Channel MOSFET designed for power electronics applications requiring efficient switching and high current capacity. With a maximum continuous drain current of 20 A and a voltage rating of 600 V, this device supports robust power management in industrial and consumer electronics circuits.
Equipped with an enhancement mode channel and packaged in a 3-pin TO-220 through-hole format, STP20NM60FP offers easy mounting and integration on printed circuit boards. The device boasts a low maximum drain-source resistance of 290 milliohms, minimizing conduction losses and enhancing overall system efficiency.
Capable of dissipating up to 45 watts, this MOSFET operates reliably over a wide temperature range from -65°C to 150°C, making it suitable for demanding environments such as industrial automation, power supplies, and motor control.
The typical gate charge of 39 nC at standard gate voltage enables rapid switching performance, improving switching speed and reducing power loss. Its compact physical dimensions (length 10.4 mm, width 4.6 mm, height 9.3 mm) facilitate space-saving circuit designs.
MDmesh technology enhances device ruggedness and switching behavior. High voltage and current capabilities suit industrial and commercial power electronics. Through-hole TO-220 package provides mechanical strength and heat dissipation advantages.
Wide operating temperature ensures dependable use in diverse conditions. This MOSFET is an ideal choice for industrial, laboratory, manufacturing, and HVAC power control applications requiring reliable and efficient semiconductor switching components.
Explore more discrete semiconductor components and power MOSFETs on EnvMart for comprehensive solutions to your electronic design challenges.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes, allowing it to handle substantial loads effectively.
It has a maximum drain-source voltage rating of 600 volts, making it suitable for high-voltage switching applications.
This model comes in a 3-pin TO-220 through-hole package, facilitating easy installation on printed circuit boards.
It can safely dissipate up to 45 watts during operation, ensuring efficient thermal management.
The typical gate charge is 39 nC at standard gate voltage, which supports rapid switching performance.
The STP20NM60FP operates reliably over a wide temperature range from -65°C to 150°C, suitable for harsh environments.
It features a low maximum drain-source resistance of 290 milliohms, minimizing conduction losses.
This model utilizes an enhancement mode N-channel configuration, which is ideal for power applications.
The dimensions of this MOSFET are 10.4 mm in length, 4.6 mm in width, and 9.3 mm in height.
The maximum gate-source voltage is rated at -30V to +30V, providing flexibility in circuit design.
It is suitable for industrial automation, power supplies, and motor control applications requiring efficient semiconductor switching.
This MOSFET is designed with MDmesh technology, which enhances performance and efficiency in power applications.
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