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Vishay N-Channel TrenchFET Power MOSFET 3-Pin SOT-23, 60 V, 300 mA, Enhancement Mode 2N7002K-T1-GE3

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1.02mm
Length 3.04mm
Model 2N7002K-T1-GE3
Width 1.4mm
Mount Type Surface
Series 2N7002K
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Standards/Approvals IEC 61249-2-21, JEDEC JS709A, RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 300mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 0.35W
Typical Gate Charge Qg @ Vgs 0.4nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V
N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Vishay 2N7002K-T1-E3Brand Vishay

Key Features

  • Enhancement mode N-Channel TrenchFET MOSFET with 3-pin SOT-23 package.
  • Maximum continuous drain current of 300 mA for low power applications.
  • Supports a maximum drain-source voltage rating of 60 V.
  • Low typical gate charge of 0.4 nC enabling efficient switching.
  • Maximum power dissipation of 0.35 W with 2 Ω drain-source resistance.
  • Wide operating temperature range from -55°C to 150°C.
  • Complies with IEC 61249-2-21, JEDEC JS709A, and RoHS standards.

Product Description

Vishay 2N7002K-T1-GE3 is a high-quality N-Channel TrenchFET Power MOSFET engineered for efficient low-power switching in various electronic applications. Housed in a compact 3-Pin SOT-23 surface mount plastic package, this device supports a maximum continuous drain current of 300 mA and maximum drain-source voltage of 60 V, making it ideal for switching and amplification tasks in consumer electronics, industrial automation, and instrumentation.

The MOSFET operates in enhancement mode providing reliable switching characteristics with typical gate charge of only 0.4 nC, which results in low gate drive losses and higher switching speeds. With a maximum drain-source resistance of 2 ohms, it ensures minimal conduction losses and improved thermal management with a power dissipation capacity of 0.35 W.

Designed to sustain extreme operating conditions, this Vishay transistor operates reliably between -55°C to 150°C. It complies with IEC 61249-2-21, JEDEC JS709A, and RoHS standards, ensuring environmental safety and industry compatibility.

The small footprint of 3.04 mm length, 1.4 mm width, and 1.02 mm height allows space-efficient PCB layouts in compact electronic assemblies. This MOSFET features an enhancement mode channel type with a 3-pin SOT-23 surface mount package.

It has a maximum continuous drain current of 300 mA, suitable for low power electronic circuits. The device supports a maximum drain-source voltage of 60 V for reliable operation. Typical gate charge at Vgs is low at 0.4 nC, enabling efficient switching performance.

The MOSFET offers a maximum power dissipation of 0.35 W and low drain-source resistance of 2 ohms. Operating temperature range is from -55°C to 150°C, allowing usage in harsh environments. The components comply with IEC 61249-2-21, JEDEC JS709A standards and RoHS requirements.

This compact device measures 3.04 mm length, 1.4 mm width, and 1.02 mm height.

Ideal for industrial, automotive (non-automotive standard), consumer electronics, and laboratory use, this Vishay MOSFET delivers reliable power switching performance. Explore more Power MOSFETs and semiconductor devices at EnvMart for quality and technical excellence.

Vishay N-Channel TrenchFET Power MOSFET 3-Pin SOT-23, 60 V, 300 mA, Enhancement Mode 2N7002K-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 300 mA, making it suitable for low power applications.

It supports a maximum drain-source voltage rating of 60 V, ensuring reliable operation in various applications.

The typical gate charge at Vgs is low at 0.4 nC, which enables efficient switching performance.

This model has dimensions of 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.

The maximum power dissipation capacity for this MOSFET is 0.35 W, allowing for effective thermal management.

This model complies with IEC 61249-2-21, JEDEC JS709A, and RoHS standards, ensuring environmental safety and compatibility.

It features an N-channel type with enhancement mode, providing reliable switching characteristics.

The maximum drain-source resistance for this model is 2 ohms, which helps minimize conduction losses.

This model is designed for surface mount applications, utilizing a compact SOT-23 package.

It is ideal for use in consumer electronics, industrial automation, and instrumentation applications.

The maximum gate-source voltage for this MOSFET is -20V to +20V, allowing for flexible circuit designs.

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