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Vishay N-Channel Power MOSFET, 4.1 A, 800 V Drain-Source Voltage, 125W TO-220AB Through Hole IRFBE30PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFBE30PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFBE30 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.1A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 78nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.8V |
| N-channel MOSFET,IRFBE30 4.1A 800VBrand | Vishay |
Key Features
- This MOSFET supports enhancement-mode conduction with a maximum Drain-Source Resistance of 3 ohms.
- The device offers high power dissipation of 125W suitable for demanding electronic systems.
- Typical gate charge is 78nC at Vgs, reducing energy requirements for gate drive.
- Designed for through-hole PCB mounting with three pins in a TO-220AB package.
- Operates reliably in extreme temperatures from -55°C to 150°C.
- Maximum gate-source voltage limit is ±20V to protect the gate structure.
- Forward voltage drop is rated at 1.8V for efficient switching.
- Applications include high-voltage power supplies, converters, industrial motor controls, and linear regulators.
Product Description
Vishay IRFBE30PBF is a high-voltage N-channel power MOSFET featuring a drain-source voltage rating of 800 V and a continuous drain current capability of 4.1 A. Packaged in a through-hole TO-220AB with three pins, this device is suited for power switching and amplification in industrial, instrumentation, and power supply applications.
The MOSFET is an enhancement mode transistor, requiring a positive gate voltage relative to the source to conduct. It supports a maximum power dissipation of 125W, allowing effective thermal management under moderate load conditions.
This transistor is designed to operate across a wide temperature range from -55°C to 150°C, making it reliable in harsh environments. Its typical gate charge of 78nC at Vgs aids in lowering the energy needed for switching, while the maximum gate-source voltage rating of ±20V helps protect the device during operation.
The device also features a maximum Drain-Source Resistance (Rds(on)) of 3 ohms and a forward voltage drop of 1.8 V, which contribute to its efficiency in power management circuits.
High 800 V drain-source voltage rating for demanding power applications. 4.1 A continuous drain current supports moderate load switching. Through-hole TO-220AB package for easy mounting and heat sinking. Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 78nC reduces switching energy requirements. Maximum gate-source voltage limit of ±20 V protects gate integrity. Suitable for power supplies, converters, motor control, and instrumentation.
This MOSFET is ideal for industrial and laboratory environments requiring reliable, robust power control components. Its design supports switching and linear operation modes, fitting well in power electronics involving moderate currents and high voltages.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 800 V, making it suitable for high-voltage applications.
This unit has a continuous drain current capability of 4.1 A, allowing it to handle moderate load switching effectively.
It supports a maximum power dissipation of 125 W, which is beneficial for thermal management in power applications.
The typical gate charge at Vgs is 78 nC, which helps in reducing the energy requirements for gate drive.
The dimensions of the TO-220AB package are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
This model operates reliably within a temperature range of -55°C to 150°C, making it suitable for harsh environments.
The maximum gate-source voltage limit for this device is ±20 V, which helps protect the gate structure during operation.
The forward voltage drop for this MOSFET is rated at 1.8 V, contributing to its efficiency in power management circuits.
It is designed for through-hole mounting, specifically in a TO-220AB package with three pins.
This MOSFET is suitable for applications such as high-voltage power supplies, converters, industrial motor controls, and linear regulators.
The maximum drain-source resistance (Rds(on)) for this model is 3 ohms, which aids in efficient operation.
The MOSFET complies with RoHS standards, ensuring it meets environmental regulations.
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